Semiconductor Lasers and Diode-based Light Sources for Biophotonics

2018 ◽  
2020 ◽  
Author(s):  
Yu Deng ◽  
Zhuo-Fei Fan ◽  
Shiyuan Zhao ◽  
Frédéric Grillot ◽  
Cheng Wang

Abstract Chaos in nonlinear dynamical systems is featured with irregular appearance and with high sensitivity to initial conditions. Near-infrared semiconductor lasers subject to optical feedback from an external reflector are popular chaotic light sources, which have enabled multiple applications. Here, we report the fully-developed chaos in a mid-infrared interband cascade laser with external optical feedback. The chaos leads to significant electrical power enhancement over a frequency span of 500 MHz. In addition, the laser also exhibits periodic oscillations or low-frequency fluctuations before producing chaos, depending on the operation conditions. This work paves the way for extending chaos investigations from the near-infrared regime to the mid-infrared regime, which can stimulate potential applications in this spectral range.


Author(s):  
Yoshitaka Nakatsu ◽  
Yoji Nagao ◽  
Tsuyoshi Hirao ◽  
Yoshihiro Hara ◽  
Shingo Masui ◽  
...  

2007 ◽  
Author(s):  
Martin Punke ◽  
Thomas Woggon ◽  
Marc Stroisch ◽  
Bernd Ebenhoch ◽  
Ulf Geyer ◽  
...  

2016 ◽  
Author(s):  
Takuo Tanemura ◽  
Baifu Zhang ◽  
Yoshiaki Nakano

1983 ◽  
Vol 55 (8) ◽  
pp. 1419-1420 ◽  
Author(s):  
Yuji. Kawabata ◽  
Teiichiro. Kamikubo ◽  
Totaro. Imasaka ◽  
Nobuhiko. Ishibashi

1996 ◽  
Author(s):  
Mikhail I. Nemenov ◽  
Evgenii A. Avrutin

1999 ◽  
Vol 607 ◽  
Author(s):  
Rui Q. Yang ◽  
J. D. Bruno ◽  
J. L. Bradshaw ◽  
J. T. Pham ◽  
D. E. Wortman

AbstractThe interband cascade lasers (IC) represent a new class of mid-IR light sources, which take advantage of the broken-gap alignment in type-II quantum wells to reuse electrons for sequential photon emissions from serially connected active regions. Here, we describe recent progress in InAs/GaInSb type-II IC lasers at emission wavelengths of 3.8-4 µm; these semiconductor lasers have exhibited significantly higher differential quantum efficiencies and peak powers than previously reported. Also, these lasers were able to operate at temperatures up to 217 K, which is higher than the previous record (182 K) for an IC laser at this wavelength. We observed from several devices at temperatures above 80 K a slope efficiency of ∼800 mW/A per facet, corresponding to a differential external quantum efficiency of /500%. A peak optical output power exceeding 4 W/facet and peak power efficiency of /7% were observed from a device at 80 K. Also, we report the first cw operation of IC lasers.


2020 ◽  
Vol 10 (4) ◽  
pp. 1552
Author(s):  
Shu-Hao Chang

With the development of 5G, mobile communication, and optical communication technologies, semiconductor optical amplifiers (SOAs) have become an important research topic. However, most SOA-related studies have focused on a technical discussion or market research but have failed to indicate the critical SOA technologies and the SOA technology development trends. Therefore, this study analyzes SOA patents and constructs a technology network for SOA patents. The results indicate that the critical SOA technologies are mainly used in lasers, semiconductor lasers, light guides, electromagnetic wave transmission communication other than radio-wave communication, and devices controlling light sources. Among the five critical SOA technologies, lasers (H01S3) account for the highest percentage at 22.21%. Consequently, the critical technologies do not focus on specific technology fields but have characteristics of multiple technology fields. In addition, considerable development has occurred in semiconductor lasers in recent years. Finally, patentee analysis indicates that for SOA technologies, the public sector and academia play relatively weak roles in early technology development or following technology development. However, with the rapid development of mobile communication and optical communication, the government of each country can consider investing additional R&D funds and resources in the future. This study constructs a network model for patent technologies to explore the development tendencies for SOA technologies. This model can be used as a reference for R&D resource management and the promotion of new technologies.


Nanophotonics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 2091-2110 ◽  
Author(s):  
Chun Li ◽  
Zhen Liu ◽  
Jie Chen ◽  
Yan Gao ◽  
Meili Li ◽  
...  

AbstractSemiconductor nanowires (NW) hold great promise for micro/nanolasers owing to their naturally formed resonant microcavity, tightly confined electromagnetic field, and outstanding capability of integration with planar waveguide for on-chip optoelectronic applications. However, constrained by the optical diffraction limit, the dimension of semiconductor lasers cannot be smaller than half the optical wavelength in free space, typically several hundreds of nanometers. Semiconductor NW plasmonic lasers provide a solution to break this limitation and realize deep sub-wavelength light sources. In this review, we summarize the advances of semiconductor NW plasmonic lasers since their first demonstration in 2009. First of all, we briefly look into the fabrication and physical/chemical properties of semiconductor NWs. Next, we discuss the fundamentals of surface plasmons as well as the recent progress in semiconductor NW plasmonic lasers from the aspects of multicolor realization, threshold reduction, ultrafast modulation, and electrically driven operations, along with their applications in sensing and integrated optics. Finally, we provide insights into bright perspectives and remaining challenges.


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