Chaos of interband cascade lasers in the mid-infrared regime

2020 ◽  
Author(s):  
Yu Deng ◽  
Zhuo-Fei Fan ◽  
Shiyuan Zhao ◽  
Frédéric Grillot ◽  
Cheng Wang
Keyword(s):  
Semiconductor Lasers ◽  
Near Infrared ◽  
Optical Feedback ◽  
Nonlinear Dynamical Systems ◽  
Initial Conditions ◽  
Electrical Power ◽  
High Sensitivity ◽  
Light Sources ◽  
Mid Infrared ◽  
Operation Conditions

Abstract Chaos in nonlinear dynamical systems is featured with irregular appearance and with high sensitivity to initial conditions. Near-infrared semiconductor lasers subject to optical feedback from an external reflector are popular chaotic light sources, which have enabled multiple applications. Here, we report the fully-developed chaos in a mid-infrared interband cascade laser with external optical feedback. The chaos leads to significant electrical power enhancement over a frequency span of 500 MHz. In addition, the laser also exhibits periodic oscillations or low-frequency fluctuations before producing chaos, depending on the operation conditions. This work paves the way for extending chaos investigations from the near-infrared regime to the mid-infrared regime, which can stimulate potential applications in this spectral range.

scholarly journals Mid-infrared hyperchaos of interband cascade lasers

2022 ◽  
Vol 11 (1) ◽  
Author(s):  
Yu Deng ◽  
Zhuo-Fei Fan ◽  
Bin-Bin Zhao ◽  
Xing-Guang Wang ◽  
Shiyuan Zhao ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Near Infrared ◽  
Optical Feedback ◽  
Nonlinear Dynamical Systems ◽  
Initial Conditions ◽  
High Sensitivity ◽  
Infrared Light ◽  
Mid Infrared ◽  
Interband Cascade Lasers ◽  
Cascade Lasers

AbstractChaos in nonlinear dynamical systems is featured with irregular appearance and with high sensitivity to initial conditions. Near-infrared light chaos based on semiconductor lasers has been extensively studied and has enabled various applications. Here, we report a fully-developed hyperchaos in the mid-infrared regime, which is produced from interband cascade lasers subject to the external optical feedback. Lyapunov spectrum analysis demonstrates that the chaos exhibits three positive Lyapunov exponents. Particularly, the chaotic signal covers a broad frequency range up to the GHz level, which is two to three orders of magnitude broader than existed mid-infrared chaos solutions. The interband cascade lasers produce either periodic oscillations or low-frequency fluctuations before bifurcating to hyperchaos. This hyperchaos source is valuable for developing long-reach secure optical communication links and remote chaotic Lidar systems, taking advantage of the high-transmission windows of the atmosphere in the mid-infrared regime.

scholarly journals Infrared electric field sampled frequency comb spectroscopy

2019 ◽  
Vol 5 (6) ◽  
pp. eaaw8794 ◽  
Author(s):  
Abijith S. Kowligy ◽  
Henry Timmers ◽  
Alexander J. Lind ◽  
Ugaitz Elu ◽  
Flavio C. Cruz ◽  
...  
Keyword(s):  
Electric Field ◽  
Near Infrared ◽  
Dynamic Range ◽  
Solid Phase ◽  
Frequency Comb ◽  
Ultrashort Pulses ◽  
High Sensitivity ◽  
Laser Frequency ◽  
Light Sources ◽  
Mid Infrared

Probing matter with light in the mid-infrared provides unique insight into molecular composition, structure, and function with high sensitivity. However, laser spectroscopy in this spectral region lacks the broadband or tunable light sources and efficient detectors available in the visible or near-infrared. We overcome these challenges with an approach that unites a compact source of phase-stable, single-cycle, mid-infrared pulses with room temperature electric field–resolved detection at video rates. The ultrashort pulses correspond to laser frequency combs that span 3 to 27 μm (370 to 3333 cm−1), and are measured with dynamic range of >106 and spectral resolution as high as 0.003 cm−1. We highlight the brightness and coherence of our apparatus with gas-, liquid-, and solid-phase spectroscopy that extends over spectral bandwidths comparable to thermal or infrared synchrotron sources. This unique combination enables powerful avenues for rapid detection of biological, chemical, and physical properties of matter with molecular specificity.

scholarly journals Nonlinear Optics in Silicon Wire Waveguides: Towards Integrated Long Wavelength Light Sources

2012 ◽  
Vol 1437 ◽  
Author(s):  
Bart Kuyken ◽  
Xiaoping Liu ◽  
Richard M. Osgood ◽  
Roel Baets ◽  
Gunther Roelkens ◽  
...  
Keyword(s):  
Nonlinear Optics ◽  
Silicon Nanowire ◽  
Wavelength Region ◽  
High Sensitivity ◽  
Silicon On Insulator ◽  
Light Sources ◽  
Absorption Bands ◽  
Central Wavelength ◽  
Mid Infrared ◽  
Long Wavelength

ABSTRACTMost of the research on silicon-on-insulator integrated circuits has been focused on applications for telecommunication. By using the large refractive index of silicon, compact complex photonic functions have been integrated on a silicon chip. However, the transparency of silicon up to 8.5 μm enables the use of the platform for the mid infrared wavelength region, albeit limited by the absorption in silicon oxide from 4 μm on. This could lead to a whole new set of integrated photonics circuits for sensing, given the distinct absorption bands of many molecules in this wavelength region. These long wavelength integrated photonic circuits would preferably need broadband or widely tunable sources to probe these absorption bands.We propose the use of nonlinear optics in silicon wire waveguides to generate light in this wavelength range. Nonlinear interactions in just a few cm of silicon wire waveguides can be very efficient as a result of both the high nonlinear index of silicon and the high optical confinement obtained in these waveguides. We demonstrate the generation of a supercontinuum spanning from 1.53 μm up to 2.55 μm in a 2 cm dispersion engineered silicon nanowire waveguide by pumping the waveguide with strong picoseconds pulses at 2.12 μm [1]. Furthermore we demonstrate broadband nonlinear optical amplification in the mid infrared up to 50 dB [2] in these silicon waveguides. By using this broadband parametric gain a silicon-based synchronously pumped optical parametric oscillator (OPO) is constructed [3]. This OPO is tunable over 70 nm around a central wavelength of 2080 nm.Finally, we also demonstrate the use of higher order dispersion terms to get phase matching between optical signals at very different optical frequencies in silicon wire waveguides. In this way we demonstrate conversion of signals at 2.44 μm to the telecommunication band with efficiencies up to +19.5 dB [4]. One particularly attractive application of such wide conversion is the possibility of converting weak signals in the mid-IR to the telecom window after which they can be detected by a high-sensitivity telecom-band optical receiver.

Semiconductor lasers and solid-state emitters as near-infrared light sources for photoacoustic spectroscopy

1983 ◽  
Vol 55 (8) ◽  
pp. 1419-1420 ◽  
Author(s):  
Yuji. Kawabata ◽  
Teiichiro. Kamikubo ◽  
Totaro. Imasaka ◽  
Nobuhiko. Ishibashi
Keyword(s):  
Solid State ◽  
Semiconductor Lasers ◽  
Photoacoustic Spectroscopy ◽  
Near Infrared ◽  
Infrared Light ◽  
Light Sources ◽  
Near Infrared Light

scholarly journals Mid-infrared integrated photonics on silicon: a perspective

Nanophotonics ◽  
2017 ◽  
Vol 7 (2) ◽  
pp. 393-420 ◽  
Author(s):  
Hongtao Lin ◽  
Zhengqian Luo ◽  
Tian Gu ◽  
Lionel C. Kimerling ◽  
Kazumi Wada ◽  
...  
Keyword(s):  
System Integration ◽  
Near Infrared ◽  
Building Blocks ◽  
Integrated Photonics ◽  
Light Sources ◽  
Mid Infrared ◽  
Growth Opportunity ◽  
Constituent Component ◽  
Comprehensive Survey ◽  
On Chip

AbstractThe emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2–20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

Noise characteristics in line-narrowed semiconductor lasers with optical feedback

1981 ◽  
Vol 17 (19) ◽  
pp. 677 ◽  
Author(s):  
L. Goldberg ◽  
A. Dandridge ◽  
R.O. Miles ◽  
T.G. Giallorenzi ◽  
J.F. Weller
Keyword(s):  
Semiconductor Lasers ◽  
Optical Feedback ◽  
Noise Characteristics

Analysis of DFB semiconductor lasers with external optical feedback

1988 ◽  
Vol 24 (9) ◽  
pp. 509 ◽  
Author(s):  
J.L. Beylat ◽  
J. Jacquet
Keyword(s):  
Semiconductor Lasers ◽  
Optical Feedback

scholarly journals Towards lab-on-chip ultrasensitive ethanol detection using photonic crystal waveguide operating in the mid infrared

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Ali Rostamian ◽  
Ehsan Madadi-Kandjani ◽  
Hamed Dalir ◽  
Volker J. Sorger ◽  
Ray T. Chen
Keyword(s):  
Photonic Crystal ◽  
Slow Light ◽  
High Sensitivity ◽  
Guided Wave ◽  
Silicon On Insulator ◽  
Group Index ◽  
Photonic Crystal Waveguide ◽  
Mid Infrared ◽  
Lab On Chip ◽  
On Chip

Abstract Thanks to the unique molecular fingerprints in the mid-infrared spectral region, absorption spectroscopy in this regime has attracted widespread attention in recent years. Contrary to commercially available infrared spectrometers, which are limited by being bulky and cost-intensive, laboratory-on-chip infrared spectrometers can offer sensor advancements including raw sensing performance in addition to use such as enhanced portability. Several platforms have been proposed in the past for on-chip ethanol detection. However, selective sensing with high sensitivity at room temperature has remained a challenge. Here, we experimentally demonstrate an on-chip ethyl alcohol sensor based on a holey photonic crystal waveguide on silicon on insulator-based photonics sensing platform offering an enhanced photoabsorption thus improving sensitivity. This is achieved by designing and engineering an optical slow-light mode with a high group-index of n g  = 73 and a strong localization of modal power in analyte, enabled by the photonic crystal waveguide structure. This approach includes a codesign paradigm that uniquely features an increased effective path length traversed by the guided wave through the to-be-sensed gas analyte. This PIC-based lab-on-chip sensor is exemplary, spectrally designed to operate at the center wavelength of 3.4 μm to match the peak absorbance for ethanol. However, the slow-light enhancement concept is universal offering to cover a wide design-window and spectral ranges towards sensing a plurality of gas species. Using the holey photonic crystal waveguide, we demonstrate the capability of achieving parts per billion levels of gas detection precision. High sensitivity combined with tailorable spectral range along with a compact form-factor enables a new class of portable photonic sensor platforms when combined with integrated with quantum cascade laser and detectors.

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