scholarly journals Analysis of junction capacitance characteristics of trench gate IGBT

2021 ◽  
Vol 237 ◽  
pp. 02024
Author(s):  
Bo Wang

Trench gate field termination IGBT represents the latest structure of insulated gate bipolar transistor (IGBT). Because the internal current of IGBT includes the charging and discharging current of gate capacitance and internal junction capacitance during switching transient, the influence of junction capacitance should be considered. The conductive channel of trench gate structure is different from that of planar gate structure, and the analysis method of junction capacitance using planar gate structure will inevitably bring some deviation. Based on the characteristics of trench gate structure, this paper analyzes the different expressions of internal gate-drain junction capacitance in two cases according to whether the base depletion layer can be widened to cover the trench gate, and finally carries out simulation and experimental verification.

2021 ◽  
Vol 237 ◽  
pp. 02023
Author(s):  
Bo Wang

Trench gate structure represents the latest structure of Insulated Gate Bipolar Transistor(IGBT). Because there are great differences in model analysis coordinate system and carrier transport between trench gate structure and planar gate structure, the modeling method using planar gate structure will inevitably have great deviation. Based on the characteristics of trench gate structure and model analysis coordinate system, the base region is divided into PNP and PIN by considering the two-dimensional effect of carriers. According to whether the trench of PIN part can be covered by depletion layer of PNP part, the specific base region current is analyzed. Finally, simulation and experimental verification are carried out.


2010 ◽  
Vol 31 (3) ◽  
pp. 034002 ◽  
Author(s):  
Qian Mengliang ◽  
Li Zehong ◽  
Zhang Bo ◽  
Li Zhaoji

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