Analysis of base characteristics of trench gate field termination IGBT

Trench gate structure represents the latest structure of Insulated Gate Bipolar Transistor(IGBT). Because there are great differences in model analysis coordinate system and carrier transport between trench gate structure and planar gate structure, the modeling method using planar gate structure will inevitably have great deviation. Based on the characteristics of trench gate structure and model analysis coordinate system, the base region is divided into PNP and PIN by considering the two-dimensional effect of carriers. According to whether the trench of PIN part can be covered by depletion layer of PNP part, the specific base region current is analyzed. Finally, simulation and experimental verification are carried out.

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Device Simulation and Design Optimization for Diamond Based Insulated-gate Bipolar Transistors

MRS Proceedings ◽

10.1557/proc-0956-j09-17 ◽

2006 ◽

Vol 956 ◽

Author(s):

Haitao Ye ◽

Niall Tumilty ◽

David Garner ◽

Richard B. Jackman

Keyword(s):

Carrier Concentration ◽

Potential Distribution ◽

Device Simulation ◽

Bipolar Transistors ◽

Bipolar Transistor ◽

Current Gain ◽

Two Dimensional ◽

Insulated Gate Bipolar Transistors ◽

Base Region ◽

Insulated Gate Bipolar Transistor

ABSTRACTA diamond based insulated gate bipolar transistor is incorporated into a two-dimensional device simulator (MEDICI) to examine the current gain (β) and potential distribution across the device. Initially, work has focused on an important component of IGBT structure, the PNP bipolar transistor, which has been simulated and is reported upon in this paper. Empirical parameters for emitter and collector regions were used. Various carrier concentrations for base region were used to optimize the simulation. It was found that decreasing the thickness of base region leads to an increase in current gain. A buffer layer is needed to prevent the punch-through at low carrier concentration in the base region. Various approaches of increasing the current gain are also discussed in this paper.

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Analysis of junction capacitance characteristics of trench gate IGBT

E3S Web of Conferences ◽

10.1051/e3sconf/202123702024 ◽

2021 ◽

Vol 237 ◽

pp. 02024

Author(s):

Bo Wang

Keyword(s):

Experimental Verification ◽

Bipolar Transistor ◽

Depletion Layer ◽

Analysis Method ◽

Junction Capacitance ◽

Insulated Gate Bipolar Transistor ◽

Gate Capacitance ◽

Gate Structure ◽

Conductive Channel ◽

Capacitance Characteristics

Trench gate field termination IGBT represents the latest structure of insulated gate bipolar transistor (IGBT). Because the internal current of IGBT includes the charging and discharging current of gate capacitance and internal junction capacitance during switching transient, the influence of junction capacitance should be considered. The conductive channel of trench gate structure is different from that of planar gate structure, and the analysis method of junction capacitance using planar gate structure will inevitably bring some deviation. Based on the characteristics of trench gate structure, this paper analyzes the different expressions of internal gate-drain junction capacitance in two cases according to whether the base depletion layer can be widened to cover the trench gate, and finally carries out simulation and experimental verification.

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