Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode

2015 ◽  
Vol 72 (1) ◽  
pp. 10102 ◽  
Author(s):  
Abdelaziz Rabehi ◽  
Mohamed Amrani ◽  
Zineb Benamara ◽  
Boudali Akkal ◽  
Arslane Hatem-Kacha ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Current Voltage ◽  
Capacitance Voltage

Analysis of current–voltage and capacitance–voltage characteristics of Zr/p-Si Schottky diode with high series resistance

2020 ◽  
Vol 34 (10) ◽  
pp. 2050095
Author(s):  
Durmuş Ali Aldemir
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Series Resistance ◽  
Zero Bias ◽  
Acceptor Concentration ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
High Series ◽  
Contact Parameters

Zr/p-Si Schottky diode was fabricated by DC magnetic sputtering of Zr on p-Si. Zr rectifying contact gave a zero bias barrier height of 0.73 eV and an ideality factor of 1.33 by current–voltage measurement. The experimental zero bias barrier height was higher than the value predicted by metal-induced gap states (MIGSs) and electronegativity theory. The forward bias current was limited by high series resistance. The series resistance value of 9840 [Formula: see text] was determined from Cheung functions. High value of the series resistance was ascribed to low quality ohmic contact. In addition to Cheung functions, important contact parameters such as barrier height and series resistance were calculated by using modified Norde method. Re-evaluation of modified Norde functions was realized in the direction of the method proposed by Lien et al. [IEEE Trans. Electron Devices 31 (1984) 1502]. From the method, the series resistance and ideality factor values were found to be as 41.49 [Formula: see text] and 2.08, respectively. The capacitance–voltage characteristics of the diode were measured as a function of frequency. For a wide range of applied frequency, the contact parameters calculated from [Formula: see text]–[Formula: see text] curves did not exhibit frequency dependence. The barrier height value of 0.71 eV which was in close agreement with the value of zero bias barrier height was calculated from [Formula: see text]–[Formula: see text] plot at 1 MHz. The values of acceptor concentration obtained from [Formula: see text]–[Formula: see text] curves showed consistency with actual acceptor concentration of p-Si.

Modeling and Simulations of Pd/n-ZnO Schottky Diode and its Comparison with Measurements

2009 ◽  
Vol 79-82 ◽  
pp. 1317-1320 ◽  
Author(s):  
S Faraz ◽  
Haida Noor ◽  
M. Asghar ◽  
Magnus Willander ◽  
Qamar-ul Wahab
Keyword(s):  
Schottky Diode ◽  
Room Temperature ◽  
Depletion Region ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Voltage Characteristics ◽  
Recombination Current ◽  
Experimental Values ◽  
Iv Curves ◽  
The Ideal

Modeling of Pd/ZnO Schottky diode has been performed together with a set of simulations to investigate its behavior in current-voltage characteristics. The diode was first fabricated and then the simulations were performed to match the IV curves to investigate the possible defects and their states in the bandgap. The doping concentration measured by capacitance-voltage is 3.4 x 1017 cm-3. The Schottky diode is simulated at room temperature and the effective barrier height is determined from current voltage characteristics both by measurements and simulations and it was found to be 0.68eV. The ideality factor obtained from simulated results is 1.06-2.04 which indicates that the transport mechanism is thermionic. It was found that the recombination current in the depletion region is responsible for deviation of experimental values from the ideal thermionic model deployed by the simulator.

Current–voltage and capacitance–voltage characteristics of a Sn/Methylene Blue/p-Si Schottky diode

2009 ◽  
Vol 159 (15-16) ◽  
pp. 1603-1607 ◽  
Author(s):  
Y.S. Ocak ◽  
M. Kulakci ◽  
T. Kılıçoğlu ◽  
R. Turan ◽  
K. Akkılıç
Keyword(s):  
Methylene Blue ◽  
Schottky Diode ◽  
Current Voltage ◽  
Capacitance Voltage

Electrical characterization of Al/MEH-PPV/p-Si Schottky diode by current–voltage and capacitance–voltage methods

2007 ◽  
Vol 387 (1-2) ◽  
pp. 239-244 ◽  
Author(s):  
Mehmet Enver Aydin ◽  
Fahrettin Yakuphanoglu ◽  
Jae-Hoon Eom ◽  
Do-Hoon Hwang
Keyword(s):  
Schottky Diode ◽  
Electrical Characterization ◽  
Current Voltage ◽  
Capacitance Voltage

scholarly journals Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/n-Si Schottky diode

AIP Advances ◽  
2017 ◽  
Vol 7 (8) ◽  
pp. 085313 ◽  
Author(s):  
Somnath Mahato ◽  
Debaleen Biswas ◽  
Luis G. Gerling ◽  
Cristobal Voz ◽  
Joaquim Puigdollers
Keyword(s):  
Schottky Diode ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage

scholarly journals Current--Voltage, Capacitance--Voltage--Temperature, and DLTS Studies of Ni|6H-SiC Schottky Diode

2021 ◽  
Vol 55 (4) ◽  
pp. 388
Author(s):  
A. Rabehi ◽  
B. Akkal ◽  
M. Amrani ◽  
S. Tizi ◽  
Z. Benamara ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Diodes ◽  
Double Barrier ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Transient Spectroscopy

In this paper, we give a systematical description of Ni|6H-SiC Schottky diode by current--voltage I(V) characteristics at room temperature and capacitance--voltage C(V) characteristics at various frequencies (10-800 kHz) and various temperatures (77-350oK). The I(V) characteristics show a double-barrier phenomenon, which gives a low and high barrier height (phiLbn=0.91 eV, phiHbn=1.55 eV), with a difference of Deltaphibn=0.64 eV. Also, low ideality factor nL=1.94 and high ideality factor nH=1.22 are obtained. The C-V-T measurements show that the barrier height phibn decreases with decreasing of temperature and gives a temperature coefficient alpha=1.0·10-3 eV/K and phibn(T=0 K)=1.32 eV. Deep-level transient spectroscopy (DLTS) has been used to investigate deep levels in the Ni|6H-SiC Schottky diode. The traps signatures such as activation energies Ea=0.50±0.07 eV, capture cross-section sigma=1.8·10-20 cm2, and defect concentration NT=6.2·1013 cm-3 were calculated from Arrhenius plots. Keywords: si1licon carbide, Schottky diodes, I-V, C-V-T, deep-level transient spectroscopy (DLTS).

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