Electrical Characteristics of an Ag/n-InP Schottky Diode Based on Temperature-Dependent Current–Voltage and Capacitance–Voltage Measurements

Zr/p-Si Schottky diode was fabricated by DC magnetic sputtering of Zr on p-Si. Zr rectifying contact gave a zero bias barrier height of 0.73 eV and an ideality factor of 1.33 by current–voltage measurement. The experimental zero bias barrier height was higher than the value predicted by metal-induced gap states (MIGSs) and electronegativity theory. The forward bias current was limited by high series resistance. The series resistance value of 9840 [Formula: see text] was determined from Cheung functions. High value of the series resistance was ascribed to low quality ohmic contact. In addition to Cheung functions, important contact parameters such as barrier height and series resistance were calculated by using modified Norde method. Re-evaluation of modified Norde functions was realized in the direction of the method proposed by Lien et al. [IEEE Trans. Electron Devices 31 (1984) 1502]. From the method, the series resistance and ideality factor values were found to be as 41.49 [Formula: see text] and 2.08, respectively. The capacitance–voltage characteristics of the diode were measured as a function of frequency. For a wide range of applied frequency, the contact parameters calculated from [Formula: see text]–[Formula: see text] curves did not exhibit frequency dependence. The barrier height value of 0.71 eV which was in close agreement with the value of zero bias barrier height was calculated from [Formula: see text]–[Formula: see text] plot at 1 MHz. The values of acceptor concentration obtained from [Formula: see text]–[Formula: see text] curves showed consistency with actual acceptor concentration of p-Si.

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Modeling and Simulations of Pd/n-ZnO Schottky Diode and its Comparison with Measurements

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.79-82.1317 ◽

2009 ◽

Vol 79-82 ◽

pp. 1317-1320 ◽

Cited By ~ 2

Author(s):

S Faraz ◽

Haida Noor ◽

M. Asghar ◽

Magnus Willander ◽

Qamar-ul Wahab

Keyword(s):

Schottky Diode ◽

Room Temperature ◽

Depletion Region ◽

Current Voltage ◽

Capacitance Voltage ◽

Current Voltage Characteristics ◽

Recombination Current ◽

Experimental Values ◽

Iv Curves ◽

The Ideal

Modeling of Pd/ZnO Schottky diode has been performed together with a set of simulations to investigate its behavior in current-voltage characteristics. The diode was first fabricated and then the simulations were performed to match the IV curves to investigate the possible defects and their states in the bandgap. The doping concentration measured by capacitance-voltage is 3.4 x 1017 cm-3. The Schottky diode is simulated at room temperature and the effective barrier height is determined from current voltage characteristics both by measurements and simulations and it was found to be 0.68eV. The ideality factor obtained from simulated results is 1.06-2.04 which indicates that the transport mechanism is thermionic. It was found that the recombination current in the depletion region is responsible for deviation of experimental values from the ideal thermionic model deployed by the simulator.

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Current–voltage and capacitance–voltage characteristics of a Sn/Methylene Blue/p-Si Schottky diode

Synthetic Metals ◽

10.1016/j.synthmet.2009.04.024 ◽

2009 ◽

Vol 159 (15-16) ◽

pp. 1603-1607 ◽

Cited By ~ 103

Author(s):

Y.S. Ocak ◽

M. Kulakci ◽

T. Kılıçoğlu ◽

R. Turan ◽

K. Akkılıç

Keyword(s):

Methylene Blue ◽

Schottky Diode ◽

Current Voltage ◽

Capacitance Voltage

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Temperature-dependent current–voltage and capacitance–voltage characteristics of the Ag/n-InP/In Schottky diodes

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-008-9635-z ◽

2008 ◽

Vol 20 (2) ◽

pp. 105-112 ◽

Cited By ~ 19

Author(s):

F. E. Cimilli ◽

H. Efeoğlu ◽

M. Sağlam ◽

A. Türüt

Keyword(s):

Schottky Diodes ◽

Temperature Dependent ◽

Current Voltage ◽

Capacitance Voltage

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GaN P-N Structures Fabricated by Mg ION Implantation

MRS Proceedings ◽

10.1557/proc-537-g6.53 ◽

1998 ◽

Vol 537 ◽

Author(s):

E.V. Kalinina ◽

V.A. Solov'ev ◽

A.S. Zubrilov ◽

V.A. Dmitriev ◽

A.P. Kovarsky

Keyword(s):

Ion Implantation ◽

Room Temperature ◽

Implantation Dose ◽

Electrical Characteristics ◽

Scattered Electron ◽

Current Voltage ◽

Capacitance Voltage ◽

Electron Beam Induced Current ◽

P Type ◽

Secondary Ion

AbstractIn this paper we report on the first GaN p-n diodes fabricated by Mg ion implantation doping of n-type GaN epitaxial layers. Ion implantation was performed at room temperature. Implantation dose ranged from 1013 to 2 × 1016 cm2. After implantation samples were annealed for 10-15 s at a wide temperature interval from 600°C to 1200°C in flowing N2 to form p-type layers. Secondary ion mass spectroscopy, scanning electron microscopy with electron beam induced current and back scattered electron modes as well as current-voltage and capacitance-voltage measurements were used to study structural and electrical characteristics of the Mg implanted p-n structures.

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Growth, processing and characterization of GaN/AlGaN/SiC vertical n-p diodes

MRS Proceedings ◽

10.1557/proc-0892-ff13-08 ◽

2005 ◽

Vol 892 ◽

Author(s):

Steven Boeykens ◽

Maarten Leys ◽

Marianne Germain ◽

Jef Poortmans ◽

Benny Van Daele ◽

...

Keyword(s):

Bipolar Transistors ◽

Heteroepitaxial Growth ◽

Temperature Dependent ◽

Lattice Matching ◽

Transmission Electron ◽

Current Voltage ◽

Capacitance Voltage ◽

Si Doped ◽

P Type

AbstractApplication of SiC substrates instead of the most commonly used sapphire for the heteroepitaxial growth of III-Nitrides offers advantages as better lattice matching, higher thermal conductivity, and electrical conductivity. This namely offers interesting perspectives for the development of vertical III-Nitride devices for switching purposes. For example, an AlGaN/SiC heterojunction could improve the performance of SiC bipolar transistors. In this work, n-type GaN layers have been grown by MOVPE on p-type 4H-SiC substrates using Si doped Al0.08Ga0.92N or Al0.3Ga0.7N nucleation layers. They have been characterized with temperature dependent current-voltage (I-V-T), capacitance-voltage (C-V) techniques and transmission electron microscopy (TEM).

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New Method for Improving the Electrical Characteristics of P-N Junction Diode

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.378-379.606 ◽

2011 ◽

Vol 378-379 ◽

pp. 606-609 ◽

Cited By ~ 3

Author(s):

Itsara Srithanachai ◽

Surada Ueamanapong ◽

Amporn Poyai ◽

Surasak Niemcharoen

Keyword(s):

Carrier Lifetime ◽

Series Resistance ◽

Device Performance ◽

Electrical Characteristics ◽

X Ray ◽

Forward Current ◽

Current Voltage ◽

Capacitance Voltage ◽

Current Voltage Characteristics ◽

Junction Diode

This paper investigates the effect of soft X-ray irradiation various energy and times on P-N junction diodes. X-ray energy irradiated on P-N junction diode with 55 and 70 keV with various time in the range 5-50 sec. After irradiations were study on the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics. Leakages current after irradiated by X-ray are not change, while forward current are increase about 3 orders. The change of current-voltage characteristics can analyze by many parameter such as carrier lifetime and series resistance. Capacitance-voltage characteristics after irradiation are not change. The results show that soft X-ray technique can be improving performance of the P-N junction diodes. These techniques are importance to use for improving device performance in industry work.

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