scholarly journals Optical emission spectroscopy for diagnosis of diamond growth and etching processes in microwave plasma

2017 ◽  
Vol 149 ◽  
pp. 02013
Author(s):  
V.Yu. Yurov ◽  
E.V. Bushuev ◽  
A.P. Bolshakov ◽  
I.A. Antonova ◽  
V.G. Ralchenko ◽  
...  
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Microwave Plasma ◽  
Optical Emission ◽  
Diamond Growth

Investigation of Microwave Plasma during Diamond Doping by Phosphorus Using Optical Emission Spectroscopy

2019 ◽  
Vol 216 (21) ◽  
pp. 1900234
Author(s):  
Mikhail Aleksandrovich Lobaev ◽  
Dmitry Borisovich Radishev ◽  
Alexey Mikhailovich Gorbachev ◽  
Anatoly Leontievich Vikharev ◽  
Mikhail Nikolaevich Drozdov
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Microwave Plasma ◽  
Optical Emission

Optical Emission Spectroscopy-Based Tomography for Compact Low-Pressure Microwave Plasma in a Multicusp

2017 ◽  
Vol 45 (9) ◽  
pp. 2492-2503 ◽  
Author(s):  
Kavita Rathore ◽  
Sudeep Bhattacharjee ◽  
Dudh Nath Patel ◽  
Prabhat Munshi
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Microwave Plasma ◽  
Optical Emission ◽  
Low Pressure

Optical emission spectroscopy during the bias-enhanced nucleation of diamond microcrystals by microwave plasma chemical vapor deposition process

1996 ◽  
Vol 11 (11) ◽  
pp. 2852-2860 ◽  
Author(s):  
H. C. Barshilia ◽  
B. R. Mehta ◽  
V. D. Vankar
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Deposition Process ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Microwave plasma chemical vapor deposition (MWPCVD) process has been used to grow diamond thin films on silicon substrates from CH4–H2 gas mixture. Bias-enhanced nucleation (BEN) pretreatment has been used to increase the density of diamond nuclei. Various species in the CH4–H2 plasma have been identified using optical emission spectroscopy (OES), and their effect on the film microstructure has been studied. During the pretreatment process the emission intensities of CH, CH+, C2, H, and H2* species have been found to increase significantly for a negative dc bias voltage |VB| > 60 V. The higher concentration of excited species and the associated effects play a significant role in the growth process. A very thin layer of a-C containing predominant sp3 bonded carbon species in the initial stages of the growth is found to be present in these films. The microstructure of the films has been found to be very sensitive to the biasing conditions.

Sign in / Sign up

Export Citation Format

Share Document