scholarly journals Simulation of Collective Excitations in Long Josephson Junction Stacks

2018 ◽  
Vol 173 ◽  
pp. 06011
Author(s):  
Ilhom Rahmonov ◽  
Yury Shukrinov ◽  
Pavlina Atanasova ◽  
Elena Zemlyanaya ◽  
Oksana Streltsova ◽  
...  

The phase dynamics of a stack of long Josephson junctions has been studied. Both inductive and capacitive couplings between Josephson junctions have been taken into account in the calculations. The IV-curve, the dependence on the bias current of the radiation power and dynamics of each JJs of the stack have been investigated. The coexistence of the charge traveling wave and fluxon states has been observed. This state can be considered as a new collective excitation in the system of coupled Josephson junctions. We demonstrate that the observed collective excitation leads to the decrease of radiation power from the system.

2020 ◽  
Vol 10 (21) ◽  
pp. 7667
Author(s):  
Leonid Revin ◽  
Andrey Pankratov ◽  
Anna Gordeeva ◽  
Dmitry Masterov ◽  
Alexey Parafin ◽  
...  

The response of the Cold-Electron Bolometers (CEBs), integrated into a 2-D array of dipole antennas, has been measured by irradiation from YBa2Cu3O7−δ (YBCO) 50 μm long Josephson junction into the THz region at frequencies from 0.1 to 0.8 THz. The possibility of controlling the amplitude-frequency characteristic is demonstrated by the external magnetic field in the traveling wave regime of a long Josephson junction. The YBCO junction has been formed on the bicrystal Zr1−xYxO2 (YSZ) substrate by magnetron sputtering and etching of the film. CEBs have been fabricated using an Al multilayer structure by a self-aligned shadow evaporation technique on Si substrate. Both receiver and oscillator have been located inside the same cryostat at 0.3 K and 2.7 K plates, respectively.


2019 ◽  
Vol 33 (25) ◽  
pp. 1950306
Author(s):  
I. N. Askerzade

In this study, we carried out the analysis of the thermal fluctuations on the dynamics of small Josephson junction (JJ). An expression for the fluctuation of Coulomb blockade edge in the case of low and high growing rate of voltage was obtained. It was shown that dynamics of small-sized JJ under thermal fluctuations is determined by the energy ratio-parameter, temperature and growing rate of voltage.


Crystals ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 327 ◽  
Author(s):  
Marina Cuzminschi ◽  
Alexei Zubarev

In this work, we effectuated the numerical simulations of the phase dynamics of an array of Josephson junctions taking into account the capacitive coupling between the neighboring junctions and the diffusion current in the stack. We observed that, if we increase the coupling and the dissipation parameters, the IV characteristic changes qualitatively from the IV characteristics studied before. For currents greater than the critical one, we obtained an additional branch in the IV characteristics. This branch is characterized by a lower voltage than the outermost one. Moreover, we obtained an additional charging of the superconducting layers in the IV region for currents greater than the critical one. We studied the time evolution of this charging by the means of Fast Fourier Transform. We proved that the charge density wave associated with this charging has a complex spectral structure. In addition, we analyzed the behavior of the system for different boundary conditions, appropriate to different experimental setups.


2010 ◽  
Vol 104 (24) ◽  
Author(s):  
Erez Boukobza ◽  
Michael G. Moore ◽  
Doron Cohen ◽  
Amichay Vardi

2014 ◽  
Vol 503 ◽  
pp. 113-119
Author(s):  
D. Massarotti ◽  
D. Stornaiuolo ◽  
G. Rotoli ◽  
F. Carillo ◽  
L. Galletti ◽  
...  

1988 ◽  
Vol 01 (11n12) ◽  
pp. 431-435 ◽  
Author(s):  
CHANGXIN FAN ◽  
LIANGKAI YU

The V-I characteristics of Y-Ba-Cu-O device is different from that of conventional low Tc Josephson junction. This enables us to use the small critical current device as an electromagnetic radiation detector. Experiment shows that the smaller the critical current is, the greater the dynamic resistance and the higher the voltage responsibility to radiation power. When the critical current is adjusted down to zero but the V-I curve is still obviously nonlinear, the device will have highest responsibility.


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