Remote hydrogen plasma chemical vapor deposition from alkylsilane and alkylcarbosilane single-sources: Mechanism of the process and properties of resulting silicon-carbon deposits

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-691-Pr3-702
Author(s):  
A. M. Wrobel
2003 ◽  
Vol 15 (8) ◽  
pp. 1757-1762 ◽  
Author(s):  
A. M. Wróbel ◽  
A. Walkiewicz-Pietrzykowska ◽  
D. M. Bieliński ◽  
J. E. Klemberg-Sapieha ◽  
Y. Nakanishi ◽  
...  

2020 ◽  
Vol 10 (13) ◽  
pp. 4468 ◽  
Author(s):  
Dashuai Li ◽  
Ling Tong ◽  
Bo Gao

In this paper, we synthesize carbon nanotubes (CNTs) by using atmospheric pressure microwave plasma chemical vapor deposition (AMPCVD). In AMPCVD, a coaxial plasma generator provides 200 W 2.45 GHz microwave plasma at atmospheric pressure to decompose the precursor. A high-temperature tube furnace provides a suitable growth temperature for the deposition of CNTs. Optical fiber spectroscopy was used to measure the compositions of the argon–ethanol–hydrogen plasma. A comparative experiment of ethanol precursor decomposition, with and without plasma, was carried out to measure the role of the microwave plasma, showing that the 200 W microwave plasma can decompose 99% of ethanol precursor at any furnace temperature. CNTs were prepared on a stainless steel substrate by using the technology to decompose ethanol with the plasma power of 200 W at the temperatures of 500, 600, 700, and 800 °C; CNT growth increases with the increase in temperature. Prepared CNTs, analyzed by SEM and HRTEM, were shown to be multiwalled and tangled with each other. The measurement of XPS and Raman spectroscopy indicates that many oxygenated functional groups have attached to the surface of the CNTs.


2005 ◽  
Vol 480-481 ◽  
pp. 65-70 ◽  
Author(s):  
Wen Juan Cheng ◽  
Jin Chun Jiang ◽  
Yang Zhang ◽  
De Zhong Shen ◽  
He Sun Zhu

Silicon carbon nitride (SiCN) films have been deposited on silicon wafers by microwave plasma chemical vapor deposition (MPCVD). Gas mixture of H2, CH4, N2, and SiH4 was used as precursors, in which the flow rate of N2 was changed. X-ray photoelectron spectroscopy (XPS) and micro-Raman spectroscopy were employed to characterize the composition and bonding structures, while field-emission scanning electron microscopy were used to investigate the microstructure of the films. With increasing the flow rate of N2 from 50 sccm to 300 sccm, the SiCN films changed from amorphous to nanocrystalline. Characteristic current-voltage measurements indicate a low turn-on field of 10.8 V/µm. Field emission current density of 4.5 mA/cm2 has been observed at 20 V/µm.


2001 ◽  
Author(s):  
Tamara P. Smirnova ◽  
Aleksander N. Shmakov ◽  
Aram M. Badalian ◽  
Vasiliy V. Kaichev ◽  
Valery I. Bukhtiyarov ◽  
...  

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