ANISOTROPY OF MAGNETO-OPTICAL ORIENTATION EFFECT IN SINGLE CRYSTAL OF NICKEL

1971 ◽  
Vol 32 (C1) ◽  
pp. C1-1061-C1-1063
Author(s):  
G. S. KRINCHIK ◽  
E. A. GANSHINA ◽  
V. S. GUSHCHIN
Keyword(s):  
Single Crystal ◽  
Orientation Effect ◽  
Optical Orientation

Size and orientation effect on the mechanical properties of LiAlO2 single crystal

2016 ◽  
Vol 677 ◽  
pp. 302-306 ◽  
Author(s):  
S.C. Tsai ◽  
H.C. Chen ◽  
J.C. Huang ◽  
C.M. Chang ◽  
M.M.C. Chou
Keyword(s):  
Mechanical Properties ◽  
Single Crystal ◽  
Orientation Effect

Study on Epitaxial Growth of CeO2 (110)/Si(100) in Conjunction with Substrate Off-Orientation

1994 ◽  
Vol 341 ◽  
Author(s):  
Tomoyasu Inoue ◽  
Yasuhiro Yamamoto ◽  
Masataka Satoh ◽  
Tetsu Ohsuna ◽  
Hiroaki Myoren ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Thick Layer ◽  
Crystalline Quality ◽  
Orientation Effect ◽  
Layer Surface ◽  
Crystal Layer ◽  
Layer Formation ◽  
20 Nm ◽  
Single Crystal Layer

AbstractThe substrate off-orientation effect is systematically studied on epitaxial CeO2(110) layers on Si(100), and the crystalline quality is significantly improved by enhancement of domains whose 〈110〉 is perpendicular to the offset-direction (Si〈110〉). AFM measurements indicate that the CeO2 layer surface consists of stripe-shaped facets and that their size is typically 100˜200 nm long, 20 nm wide and ∼3 nm high for a 150 nm-thick layer. RHEED and XTEM reveal that CeO2〈110〉 axis is inclined from wafer normal by the off-angle. The step arrangement at Si surface observed by XTEM relates closely to the inclination of the facets. It is found that off-orientation (≥∼,2.5°) leads to single crystal layer formation. RBS analyses verify that the crystalline quality is significantly improved, especially at the surface. The best result is obtained at the off-angle of 2.5°.

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