Crystallographic orientation effect on the incipient plasticity and its stochastic behavior of a sapphire single crystal by spherical nanoindentation

2020 ◽  
Vol 46 (10) ◽  
pp. 15554-15564 ◽  
Author(s):  
Yi Ma ◽  
Linlin Cao ◽  
Wei Hang ◽  
Taihua Zhang ◽  
Julong Yuan
2020 ◽  
Vol 226 ◽  
pp. 106877 ◽  
Author(s):  
Yi Ma ◽  
Xianwei Huang ◽  
Wei Hang ◽  
Min Liu ◽  
Yuxuan Song ◽  
...  

2001 ◽  
Vol 16 (2) ◽  
pp. 333-335 ◽  
Author(s):  
P. Nekvindova ◽  
J. Spirkova-Hradilova ◽  
J. Schröfel ◽  
V. Perina

The possibility of localized doping by Er3+ diffusion at moderate (less than 500 °C) temperature was for the first time demonstrated for sapphire single crystal wafers. The doping was achieved by immersing the substrate wafers into reaction melt containing small amounts of erbium salt. The crucial point of the presented technology was a crystallographic orientation of the used wafers. The most suitable orientation of the cuts was the “X-cut” with orientation (11–20). The strong anisotropy of the moderate temperature Er3+ doping into lithium niobate and sapphire was explained on the basis of the crystal structure of particular cuts.


1971 ◽  
Vol 32 (C1) ◽  
pp. C1-1061-C1-1063
Author(s):  
G. S. KRINCHIK ◽  
E. A. GANSHINA ◽  
V. S. GUSHCHIN

Rare Metals ◽  
2006 ◽  
Vol 25 (6) ◽  
pp. 260-266 ◽  
Author(s):  
J LI ◽  
X SU ◽  
M NA ◽  
H YANG ◽  
J LI ◽  
...  

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