OPTICAL CONSTANTS OF LAYER STRUCTURES FROM ELLIPSOMETRIC DATA

1983 ◽  
Vol 44 (C10) ◽  
pp. C10-31-C10-34
Author(s):  
S. Logothetidis ◽  
J. Spyridelis
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.


Author(s):  
G.F. Bastin ◽  
H.J.M. Heijligers ◽  
J.M. Dijkstra

For the calculation of X-ray intensities emitted by elements present in multi-layer systems it is vital to have an accurate knowledge of the x-ray ionization vs. mass-depth (ϕ(ρz)) curves as a function of accelerating voltage and atomic number of films and substrate. Once this knowledge is available the way is open to the analysis of thin films in which both the thicknesses as well as the compositions can usually be determined simultaneously.Our bulk matrix correction “PROZA” with its proven excellent performance for a wide variety of applications (e.g., ultra-light element analysis, extremes in accelerating voltage) has been used as the basis for the development of the software package discussed here. The PROZA program is based on our own modifications of the surface-centred Gaussian ϕ(ρz) model, originally introduced by Packwood and Brown. For its extension towards thin film applications it is required to know how the 4 Gaussian parameters α, β, γ and ϕ(o) for each element in each of the films are affected by the film thickness and the presence of other layers and the substrate.


Author(s):  
A.Q. He ◽  
G.W. Qiao ◽  
J. Zhu ◽  
H.Q. Ye

Since the first discovery of high Tc Bi-Sr-Ca-Cu-O superconductor by Maeda et al, many EM works have been done on it. The results show that the superconducting phases have a type of ordered layer structures similar to that in Y-Ba-Cu-O system formulated in Bi2Sr2Can−1CunO2n+4 (n=1,2,3) (simply called 22(n-1) phase) with lattice constants of a=0.358, b=0.382nm but the length of c being different according to the different value of n in the formulate. Unlike the twin structure observed in the Y-Ba-Cu-O system, there is an incommensurate modulated structure in the superconducting phases of Bi system superconductors. Modulated wavelengths of both 1.3 and 2.7 nm have been observed in the 2212 phase. This communication mainly presents the intergrowth of these two kinds of one-dimensional modulated structures in 2212 phase.


Author(s):  
T. Kaneyama ◽  
M. Naruse ◽  
Y. Ishida ◽  
M. Kersker

In the field of materials science, the importance of the ultrahigh resolution analytical electron microscope (UHRAEM) is increasing. A new UHRAEM which provides a resolution of better than 0.2 nm and allows analysis of a few nm areas has been developed. [Fig. 1 shows the external view] The followings are some characteristic features of the UHRAEM.Objective lens (OL)Two types of OL polepieces (URP for ±10' specimen tilt and ARP for ±30' tilt) have been developed. The optical constants shown in the table on the next page are figures calculated by the finite element method. However, Cs was experimentally confirmed by two methods (namely, Beam Tilt method and Krivanek method) as 0.45 ∼ 0.50 mm for URP and as 0.9 ∼ 1.0 mm for ARP, respectively. Fig. 2 shows an optical diffractogram obtained from a micrograph of amorphous carbon with URP under the Scherzer defocus condition. It demonstrates a resolution of 0.19 nm and a Cs smaller than 0.5 mm.


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