EXPERIMENTAL AND THEORETICAL SOFT X-RAY EMISSION SPECTRA OF Cu-Pd SUBSTITUTIONAL ALLOYS

1987 ◽  
Vol 48 (C9) ◽  
pp. C9-1059-C9-1062
Author(s):  
P. J. DURHAM ◽  
C. F. HAGUE ◽  
J.-M. MARIOT ◽  
W. M. TEMMERMAN
Author(s):  
Y. Y. Wang ◽  
H. Zhang ◽  
V. P. Dravid ◽  
H. Zhang ◽  
L. D. Marks ◽  
...  

Azuma et al. observed planar defects in a high pressure synthesized infinitelayer compound (i.e. ACuO2 (A=cation)), which exhibits superconductivity at ~110 K. It was proposed that the defects are cation deficient and that the superconductivity in this material is related to the planar defects. In this report, we present quantitative analysis of the planar defects utilizing nanometer probe xray microanalysis, high resolution electron microscopy, and image simulation to determine the chemical composition and atomic structure of the planar defects. We propose an atomic structure model for the planar defects.Infinite-layer samples with the nominal chemical formula, (Sr1-xCax)yCuO2 (x=0.3; y=0.9,1.0,1.1), were prepared using solid state synthesized low pressure forms of (Sr1-xCax)CuO2 with additions of CuO or (Sr1-xCax)2CuO3, followed by a high pressure treatment.Quantitative x-ray microanalysis, with a 1 nm probe, was performed using a cold field emission gun TEM (Hitachi HF-2000) equipped with an Oxford Pentafet thin-window x-ray detector. The probe was positioned on the planar defects, which has a 0.74 nm width, and x-ray emission spectra from the defects were compared with those obtained from vicinity regions.


1997 ◽  
Vol 7 (C2) ◽  
pp. C2-515-C2-516
Author(s):  
H. Agren ◽  
L. G.M. Pettersson ◽  
V. Carravetta ◽  
Y. Luo ◽  
L. Yang ◽  
...  

2007 ◽  
Vol 06 (03n04) ◽  
pp. 215-219
Author(s):  
E. P. DOMASHEVSKAYA ◽  
V. A. TEREKHOV ◽  
V. M. KASHKAROV ◽  
S. YU. TURISHCHEV ◽  
S. L. MOLODTSOV ◽  
...  

Ultrasoft X-ray emission spectra (USXES) and X-ray absorption near-edge structure (XANES) spectra with the use of synchrotron radiation in the range of P L2,3-edges were obtained for the first time for nanostructures with InP quantum dots grown on GaAs 〈100〉 substrates by vapor-phase epitaxy from metal–organic compounds. These spectra represent local partial density of states in the valence and conduction bands. The additional XANES peak is detected; its intensity depends on the number of monolayers forming quantum dots. Assumptions are made on the band-to-band origin of luminescence spectra in the studied nanostructures.


1997 ◽  
Vol 248 (1-2) ◽  
pp. 86-89 ◽  
Author(s):  
E.Z. Kurmaev ◽  
A.V. Ezhov ◽  
S.N. Shamin ◽  
V.M. Cherkashenko ◽  
Yu.G. Andreev ◽  
...  

2005 ◽  
Vol 148 (1) ◽  
pp. 1-4 ◽  
Author(s):  
E.Z. Kurmaev ◽  
A.L. Ankudinov ◽  
J.J. Rehr ◽  
L.D. Finkelstein ◽  
P.F. Karimov ◽  
...  

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