scholarly journals Measurements of 3dstate occupancy in transition metals using electron energy loss spectrometry

1988 ◽  
Vol 53 (15) ◽  
pp. 1405-1407 ◽  
Author(s):  
D. H. Pearson ◽  
B. Fultz ◽  
C. C. Ahn
Author(s):  
Douglas H. Pearson

A feature of considerable interest in the electron energy loss spectra of transition metals is the L23 edge which is composed of two sharp “white lines” superimposed on a broad edge that makes up the trailing background. The white lines are due to the excitations of electrons from filled 2p1/2 and 2p3/2 states to unoccupied 3d or 4d states, and the background intensity is due to continuum excitations. Recent work on the white lines of the 3d transition metals has shown that when normalized to the continuum excitations, the total white line intensity decreases nearly linearly with atomic number (or d band occupancy) across the 3d series. Furthermore, this linear relationship may be used to measure the changes in 3d state occupancy local to specific atoms during alloying and during solid state phase transformations. In the present paper the experimental analysis of the white lines is extended to the 4d transition metals and is then compared to experimental results from the 3d metals.Electron-transparent specimens of the pure 4d metals were prepared by standard electropolishing and evaporation techniques. To prevent oxidation of the Yttrium specimen, however, a 40 nm film of Yttrium was deposited between 15 nm films of Vanadium by direct current ion sputtering in a chamber with a base pressure of < 1.0 × 10−7 Torr. Energy loss spectra were obtained using a Gatan 607 electron energy loss spectrometer attached to a Philips EM 430 electron microscope operating in image mode at 200 kV.


1992 ◽  
Vol 259 ◽  
Author(s):  
Selmer S. Wong ◽  
Shouleh Nikzad ◽  
Channing C. Ahn ◽  
Aimee L. Smith ◽  
Harry A. Atwater

ABSTRACTWe have employed reflection electron energy loss spectrometry (REELS), a surface chemical analysis technique, in order to analyze contaminant coverages at the submonolayer level during low-temperature in situ cleaning of hydrogen-terminated Si(100). The chemical composition of the surface was analyzed by measurements of the C K, O K and Si L2,3 core loss intensities at various stages of the cleaning. These results were quantified using SiC(100) and SiO2 as reference standards for C and O coverage. Room temperature REELS core loss intensity analysis after sample insertion reveals carbon at fractional monolayer coverage. We have established the REELS detection limit for carbon coverage to be 5±2% of a monolayer. A study of temperature-dependent hydrocarbon desorption from hydrogen-terminated Si(100) reveals the absence of carbon on the surface at temperatures greater than 200°C. This indicates the feasibility of epitaxial growth following an in situ low-temperature cleaning and also indicates the power of REELS as an in situ technique for assessment of surface cleanliness.


Author(s):  
M Stöger-Pollach ◽  
C Hébert ◽  
E C Karl-Rückert ◽  
P Schattschneider ◽  
B Rau ◽  
...  

1997 ◽  
Vol 3 (S2) ◽  
pp. 957-958 ◽  
Author(s):  
P. Rez

Sharp peaks at threshold are a prominent feature of the L23 electron energy loss edges of both first and second row transition elements. Their intensity decreases monotonically as the atomic number increases across the period. It would therefore seem likely that the number of d electrons at a transition metal atom site and any variation with alloying could be measured from the L23 electron energy loss spectrum. Pearson measured the white line intensities for a series of both 3d and 4d transition metals. He normalised the white line intensity to the intensity in a continuum region 50eV wide starting 50eV above threshold. When this normalised intensity was plotted against the number of d electrons assumed for each elements he obtained a monotonie but non linear variation. The energy loss spectrum is given bywhich is a product of p<,the density of d states, and the matrix elements for transitions between 2p and d states.


1990 ◽  
Vol 359 ◽  
pp. 246 ◽  
Author(s):  
Thomas J. Bernatowicz ◽  
Patrick C. Gibbons ◽  
Roy S. Lewis

2000 ◽  
Vol 77 (2) ◽  
pp. 238-240 ◽  
Author(s):  
A. Hightower ◽  
C. C. Ahn ◽  
B. Fultz ◽  
P. Rez

2005 ◽  
Vol 202 (12) ◽  
pp. 2355-2360 ◽  
Author(s):  
Thomas Höche ◽  
Frank Heyroth ◽  
Michael Grodzicki ◽  
Peter A. van Aken

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