Low‐temperature annealing effect of as‐grown Bi‐Sr‐Ca‐Cu‐O thin films on superconducting property and thec‐axis lattice constant

1989 ◽  
Vol 55 (13) ◽  
pp. 1360-1362 ◽  
Author(s):  
S. Miura ◽  
T. Yoshitake ◽  
T. Manako ◽  
Y. Miyasaka ◽  
N. Shohata ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Lattice Constant ◽  
Superconducting Property ◽  
Annealing Effect ◽  
Low Temperature Annealing

Low-Temperature Annealing Effect on Bi-Sr-Ca-Cu-O Thin Films Prepared by Layer-by-Layer Deposition

1991 ◽  
Vol 30 (Part 2, No. 5A) ◽  
pp. L830-L833 ◽  
Author(s):  
Akira Tsukamoto ◽  
Kazushige Imagawa ◽  
Masahiko Hiratani ◽  
Keiichi Kanehori ◽  
Kazumasa Takagi
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Annealing Effect ◽  
Layer By Layer ◽  
Low Temperature Annealing ◽  
Layer Deposition

scholarly journals Quantum Hall effect at cleaved InSb surfaces and low-temperature annealing effect

2007 ◽  
Vol 90 (20) ◽  
pp. 202104 ◽  
Author(s):  
Ryuichi Masutomi ◽  
Masayuki Hio ◽  
Toshimitsu Mochizuki ◽  
Tohru Okamoto
Keyword(s):  
Low Temperature ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Annealing Effect ◽  
Low Temperature Annealing

Resistance Decrease of Phosphorus Ion Implanted Poly-Si Thin Films During Low Temperature Annealing

1995 ◽  
Vol 403 ◽  
Author(s):  
H. Tokioka ◽  
Y. Masutani ◽  
Y. Goto ◽  
S. Nagao ◽  
H. Kurokawa
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Layer Thickness ◽  
Sheet Resistance ◽  
Lower Layer ◽  
Low Temperature Annealing ◽  
Two Layer Model ◽  
Temperature Activation ◽  
Resistance Decrease ◽  
Ellipsometry Data

AbstractDuring low temperature (below 450°C) annealing, the sheet resistance of phosphorus implanted poly-Si thin films (film thickness : 50nm) decreased to lE+3Ω/square. The sheet resistance after annealing decreased with annealing time and became lower when the dosing level was high enough. At the dose of 8E+14 ions/cm2 we obtained a sheet resistance of 1E+3Q/square by annealing at 450°C for 180min. We analyzed ellipsometry data assuming a two-layer model where the surface layer consists of a-Si and the lower layer of poly-Si. This analysis indicated that the surface of implanted films was amorphized by ion implantation and the amorphized layer thickness increased with dosing level. Also, it turned out that the lower poly-Si layer thickness increased from 30nm to 50nm after annealing accompanied by the conversion of a-Si layer to poly-Si layer. During annealing at low temperature, activation of phosphorus ions implanted into poly-Si and recrystallization of a-Si took place simultaneously and the sheet resistance after annealing decreased with the increase in thickness of the recrystallized region.

Influence of low-temperature annealing on the properties of Y1Ba2Cu3O7−δ thin films

1998 ◽  
Vol 24 (1) ◽  
pp. 24-25
Author(s):  
Yu. N. Drozdov ◽  
S. A. Pavlov ◽  
A. E. Parafin
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Low Temperature Annealing

Photoluminescence and defect evolution of nano-ZnO thin films at low temperature annealing

2012 ◽  
Vol 56 (1) ◽  
pp. 25-31 ◽  
Author(s):  
AiLing Yang ◽  
Yun Yang ◽  
ZhenZhen Zhang ◽  
XiChang Bao ◽  
RenQiang Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Zno Thin Films ◽  
Nano Zno ◽  
Low Temperature Annealing ◽  
Defect Evolution

Low-Temperature Annealing Effect on Superconducting and Structural Properties of Ion-Irradiated Bi2Sr2CaCu2OxCrystals

1992 ◽  
Vol 31 (Part 2, No. 12A) ◽  
pp. L1671-L1674 ◽  
Author(s):  
Bernard Chenevier ◽  
Hiroaki Kumakura ◽  
Shozo Ikeda ◽  
Kazumasa Togano ◽  
Satoru Okayasu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Structural Properties ◽  
Annealing Effect ◽  
Low Temperature Annealing
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