X‐ray photoelectron spectroscopy studies of initial growth mechanism of CdTe layers grown on (100)GaAs by organometallic vapor phase epitaxy

ABSTRACTX-ray-excited luminescence of GaN doped with Eu ions as a luminescent center was observed in the wavelength range from 350 nm to 650 nm. Three peaks at 375 nm, 550 nm and 622 nm were found. To survey the mechanism of the photoluminescence due to non-resonance excitation, photoluminescence X-ray excitation spectra are also measured. The mechanism of the luminescence occurrence was briefly discussed based on the model developed by Emura et al.

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X-RAY MONITORING OF InGaAsP LAYERS GROWN BY VAPOR PHASE EPITAXY

MRS Proceedings ◽

10.1557/proc-56-115 ◽

1985 ◽

Vol 56 ◽

Cited By ~ 2

Author(s):

A. T. MACRANDER ◽

K. STREGE

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Initial Growth ◽

Double Crystal ◽

X Ray ◽

Quality Material

AbstractX-ray double crystal diffractometry provides a means of rapidly characterizing epitaxial structures. Because the technique is rapid and nondestructive and because it yields a wealth of information, rocking curves have been routinely obtained and extensively studied by us. We present here selective results illustrating the typical progression in layer quality which occurs from the initial growth in a reactor to the growth of device quality material.

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Initial growth of gallium arsenide on silicon by organometallic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.100033 ◽

1988 ◽

Vol 53 (12) ◽

pp. 1101-1103 ◽

Cited By ~ 11

Author(s):

S. J. Rosner ◽

Jun Amano ◽

J. W. Lee ◽

J. C. C. Fan

Keyword(s):

Gallium Arsenide ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Initial Growth ◽

Organometallic Vapor Phase Epitaxy

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How thin can we make square profiles in InP/GaInAs/InP wells by organometallic vapor phase epitaxy? - x-ray CTR scattering measurements

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. ◽

10.1109/iciprm.2004.1442775 ◽

2005 ◽

Author(s):

M. Tabuchi ◽

S. Hisadome ◽

H. Yamada ◽

R. Oga ◽

Y. Takeda

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

X Ray ◽

Scattering Measurements

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The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GAN

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300004191 ◽

2000 ◽

Vol 5 (S1) ◽

pp. 138-144 ◽

Cited By ~ 2

Author(s):

Shulin Gu ◽

Rong Zhang ◽

Jingxi Sun ◽

Ling Zhang ◽

T. F. Kuech

Keyword(s):

Vapor Phase ◽

Photoelectron Spectroscopy ◽

Alloy Layer ◽

Vapor Phase Epitaxy ◽

Hydride Vapor Phase Epitaxy ◽

Buffer Layers ◽

Material Surface ◽

Sapphire Surface ◽

X Ray ◽

Force Microscopy

The nature and impact of ZnO buffer layers on the initial stages of the hydride vapor phase epitaxy (HVPE) of GaN have been studied by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), x-ray diffraction (XRD) and photoluminescence (PL). During pre-growth heating, the surface ZnO layer was found to both desorb from ZnO-coated sapphire and react with the underlying sapphire surface forming a thin ZnAl2O4 alloy layer between ZnO and sapphire surface. This ZnO-derived surface promotes the initial nucleation of the GaN and markedly improves material surface morphology, quality and growth reproducibility.

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X-ray characterization of composition and relaxation of AlxGa1−xN(0≤x≤1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.3457149 ◽

2010 ◽

Vol 108 (4) ◽

pp. 043526 ◽

Cited By ~ 20

Author(s):

James Tweedie ◽

Ramon Collazo ◽

Anthony Rice ◽

Jinqiao Xie ◽

Seiji Mita ◽

...

Keyword(s):

Vapor Phase ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

X Ray

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Growth of CDTE on GaAs and Si Substrates by Organometallic Vapor Phase Epitaxy

MRS Proceedings ◽

10.1557/proc-318-213 ◽

1993 ◽

Vol 318 ◽

Author(s):

Ishwara Bhat

Keyword(s):

Vapor Phase ◽

Atomic Layer ◽

Cdte Layer ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

High Quality ◽

X Ray ◽

Si Substrates ◽

Gaas Substrates ◽

Direct Growth

ABSTRACTEpitaxial (100) CdTe layers have been grown by organometallic vapor phase epitaxy (OMVPE) on GaAs and Si substrates. A thin layer of CdTe was first grown by atomic layer epitaxy (ALE) on GaAs substrates followed by thicker CdTe layer by conventional organometallic vapor phase epitaxy (OMVPE). This process resulted in high quality (100) CdTe on GaAs substrates. On Si substrates, direct growth of CdTe resulted in only polycrystalline layers. Hence, a thin Ge buffer layer grown at low temperature followed by an interfacial layer of ZnTe was used to get high quality (100) CdTe on Si. The process developed here eliminates the high temperature (>850°C) deoxidation step generally required when Si substrates are used. The CdTe layers were characterized by X-ray diffraction and optical microscopy. X-ray rocking curve with full width at half maximum (FWHM) of about 260 arcsec has been obtained for a 4 um thick CdTe layer. The results presented demonstrate novel techniques to control the hetero-interfaces in order to grow high quality CdTe on GaAs and Si substrates.

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