Optical emission properties of semi‐insulating GaAs grown at low temperatures by molecular beam epitaxy

ABSTRACTShubnikov-de Haas and Hall measurements have been performed on singly delta doped GaAs(Si) structures, grown by molecular beam epitaxy, enabling us to study the effects of illumination and temperature upon bulk and individual subband, mobilities and carrier concentrations. In a highly doped sample, where the peak 3D electron concentration approaches 2×1019cm−3, we have observed novel changes in subband transport characteristics, not observed in the lower doped samples, which we attribute to the presence of DX centre phenomena. This paper explains the variations in individual subband transport properties due to a possible shift of the electronic wave functions contained in the potential well. This shift occurs due to a recombination-autoionization(R-A) process involving filled DX centres and free holes upon sample illumination at low temperatures.

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Classification of Ge hut clusters in arrays formed by molecular beam epitaxy at low temperatures on the Si(001) surface

Physics-Uspekhi ◽

10.3367/ufne.0180.201003e.0289 ◽

2010 ◽

Vol 53 (3) ◽

pp. 279-290 ◽

Cited By ~ 24

Author(s):

Larisa V Arapkina ◽

Vladimir A Yuryev

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperatures ◽

Molecular Beam

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Forward‐bias characteristics of Si bipolar junctions grown by molecular beam epitaxy at low temperatures

Applied Physics Letters ◽

10.1063/1.110490 ◽

1993 ◽

Vol 63 (17) ◽

pp. 2408-2410 ◽

Cited By ~ 33

Author(s):

H. Jorke ◽

H. Kibbel ◽

K. Strohm ◽

E. Kasper

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperatures ◽

Molecular Beam ◽

Forward Bias

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Structural and light-emission properties of bulk Germanium islands grown on Silicon using Molecular Beam Epitaxy

2009 6th IEEE International Conference on Group IV Photonics ◽

10.1109/group4.2009.5338321 ◽

2009 ◽

Author(s):

L. Nataraj ◽

N. Sustersic ◽

M. Coppinger ◽

F. Gerlein ◽

J. Kolodzey ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Light Emission ◽

Emission Properties

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Morphological Transformation of a Germanium Layer Grown on a Silicon Surface by Molecular-Beam Epitaxy at Low Temperatures

Physics of the Solid State ◽

10.1134/1.1853448 ◽

2005 ◽

Vol 47 (1) ◽

pp. 71 ◽

Cited By ~ 2

Author(s):

T. M. Burbaev

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperatures ◽

Silicon Surface ◽

Molecular Beam ◽

Morphological Transformation ◽

Germanium Layer

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Intrinsic N-Type Modulation Doping in Inp-Based Heterostructures

MRS Proceedings ◽

10.1557/proc-421-21 ◽

1996 ◽

Vol 421 ◽

Author(s):

W.M. Chen ◽

I.A. Buyanova ◽

A. Buyanov ◽

W.G. Bi ◽

C.W. Tu

Keyword(s):

Electron Transfer ◽

Molecular Beam Epitaxy ◽

Low Temperatures ◽

Molecular Beam ◽

Electron Gas ◽

Shallow Donor ◽

Modulation Doping ◽

Gas Source ◽

Shubnikov De Haas Oscillations ◽

Lt Inp

AbstractWe propose and demonstrate a new doping approach, i.e. intrinsic doping, for n-type modulation doping in InP-based heterostructures. Instead of the conventional method of n-type doping by shallow donor impurities, grown-in intrinsic defects are utilized to provide the required doping without external doping sources. The success of this approach is clearly demonstrated by our results from InGaAs/InP heterostructures, where the required n-type doping in the InP barriers is provided by Pin antisites, preferably introduced during off-stoichiometric growth of InP at low temperatures (LT-InP) by gas source molecular beam epitaxy. A twodimensional electron gas (2DEG) is shown to be formed near the InGaAs/InP heterointerface as a result of electron transfer from the LT-InP to the InGaAs active layer, from studies of Shubnikov-de Haas oscillations and photoluminescence. The concentration of the 2DEG is determined to be as high as 1.15×1012 cm−2, where two subbands of the 2DEG are readily occupied.

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