Structural and light-emission properties of bulk Germanium islands grown on Silicon using Molecular Beam Epitaxy

2009 ◽  
Author(s):  
L. Nataraj ◽  
N. Sustersic ◽  
M. Coppinger ◽  
F. Gerlein ◽  
J. Kolodzey ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emission ◽  
Emission Properties

Progress on Preparation of InAs Nanowires by Molecular Beam Epitaxy

2016 ◽  
Vol 852 ◽  
pp. 349-355
Author(s):  
Ru Xue Li ◽  
Ji Long Tang ◽  
Dang Fang ◽  
Shuang Peng Wang ◽  
Hai Feng Zhao ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Speed ◽  
Molecular Beam ◽  
Light Emission ◽  
Infrared Light ◽  
Dimensional Structure ◽  
Uniform Structure ◽  
Free Standing ◽  
Inas Nanowires ◽  
Low Dimensional

InAs nanowires (NWs) is a key material for high-speed electronics, near-and mid-infrared light emission and detection applications. Much effort has been devoted to the fabrication of InAs NWs and molecular beam epitaxy (MBE) evolved as a powerful method to grow semiconductor nanowires with several interesting features, but it was rarely reported. We present kinds of growths (metal-catalyzed growth, self-catalyzed growth, self-induced free-standing growth, self-induced position-controlled growth, self-assisted nucleation growth etc.) of InAs NWs by MBE, and discuss how to control growth of uniform-structure InAs NWs on homogeneous or heterogeneous substrates, which can provide the reference for the manufacture of low dimensional structure.

scholarly journals Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

Micromachines ◽  
2019 ◽  
Vol 10 (8) ◽  
pp. 492 ◽  
Author(s):  
Ha Quoc Thang Bui ◽  
Ravi Teja Velpula ◽  
Barsha Jain ◽  
Omar Hamed Aref ◽  
Hoang-Duy Nguyen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Performance ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Active Regions ◽  
Core Shell ◽  
Next Generation ◽  
Light Emitting ◽  
Full Color

We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of ~ 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.

Optical emission properties of semi‐insulating GaAs grown at low temperatures by molecular beam epitaxy

1992 ◽  
Vol 60 (24) ◽  
pp. 3007-3009 ◽  
Author(s):  
R. Enrique Viturro ◽  
Michael R. Melloch ◽  
Jerry M. Woodall
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Optical Emission ◽  
Emission Properties

The Structural and Optical Properties of Self-assembled InGaN/GaN Quantum Dots Grown by Molecular Beam Epitaxy

2006 ◽  
Vol 955 ◽  
Author(s):  
Tim Michael Smeeton ◽  
Mathieu Sénès ◽  
Katherine L Smith ◽  
Stewart E Hooper ◽  
Jon Heffernan
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emission ◽  
Structural And Optical Properties ◽  
Discrete Energy ◽  
Time Resolved ◽  
Transmission Electron ◽  
Z Contrast

ABSTRACTThe structural and optical properties of InGaN quantum dots grown by plasma-assisted molecular beam epitaxy (MBE) have been characterised using atomic force microscopy, high-resolution transmission electron microscopy (TEM), Z-contrast scanning TEM, micro-photoluminescence (PL), temperature dependent PL and time-resolved PL. The uncapped InGaN nano-islands have densities of ∼1.5 × 1011 cm−2, heights of (1.7 ± 1.0) nm and diameters of (10 ± 4) nm. These parameters are not substantially changed during overgrowth of a GaN cap and the resulting quantum dots have a composition of In0.15Ga0.85N. The observation of narrow luminescence peaks in micro-PL measurements proves light emission from discrete energy states and the optical properties indicate strong confinement of carriers in the quantum dots and an unusually weak impact of piezoelectric field effects.

scholarly journals Growth and characterization of InP-based 1750 nm emitting membrane external-cavity surface-emitting laser

2020 ◽  
Vol 126 (12) ◽  
Author(s):  
Artur Broda ◽  
Bartosz Jeżewski ◽  
Iwona Sankowska ◽  
Michał Szymański ◽  
Paweł Hoser ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Epitaxial Growth ◽  
Spectral Range ◽  
Molecular Beam ◽  
External Cavity ◽  
Cavity Surface ◽  
Emission Properties ◽  
Surface Emitting Laser

AbstractThe epitaxial growth and emission properties of a membrane external-cavity surface-emitting laser (MECSEL) are demonstrated in the 1750 nm band. A heterostructure consisting of InGaAs quantum wells enclosed by InGaAlAs barriers was deposited on InP by molecular beam epitaxy. The emitted power exceeded 1.5 W, which is the highest that has been reported in this spectral range to date.

scholarly journals Light emission and magnetic properties of aluminum films grown on SrTiO3 by molecular beam epitaxy

AIP Advances ◽  
2016 ◽  
Vol 6 (6) ◽  
pp. 065228
Author(s):  
Y. J. Wang ◽  
W. Q. Zhou ◽  
M. Meng ◽  
S. X. Wu ◽  
S. W. Li
Keyword(s):  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emission ◽  
Aluminum Films

High-quality GaNAs∕GaAs quantum wells with light emission up to 1.44μm grown by molecular-beam epitaxy

2005 ◽  
Vol 87 (14) ◽  
pp. 141913 ◽  
Author(s):  
S. M. Wang ◽  
Q. F. Gu ◽  
Y. Q. Wei ◽  
M. Sadeghi ◽  
A. Larsson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Light Emission ◽  
High Quality

InGaAs Quantum Dots Grown by Molecular Beam Epitaxy for Light Emission on Si Substrates

2011 ◽  
Vol 11 (10) ◽  
pp. 9153-9159 ◽  
Author(s):  
C. Bru-Chevallier ◽  
A. El Akra ◽  
D. Pelloux-Gervais ◽  
H. Dumont ◽  
B. Canut ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emission ◽  
Si Substrates

Multi-wavelength light emission from InGaN nanowires on pyramid-textured Si(100) substrate grown by stationary plasma-assisted molecular beam epitaxy

Nanoscale ◽  
2020 ◽  
Vol 12 (16) ◽  
pp. 8836-8846
Author(s):  
Peng Wang ◽  
Hedong Chen ◽  
Hao Wang ◽  
Xingyu Wang ◽  
Hongjie Yin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emission ◽  
Si Substrate ◽  
Stationary Plasma ◽  
Multi Wavelength ◽  
Wavelength Light

The In composition of InGaN nanowires grown on a pyramid-textured Si substrate was laterally tuned beyond the nanoscale with stationary plasma-assisted molecular beam epitaxy.

Mechanism for Light Emission in GaNAs/GaAs Structures Grown by Molecular Beam Epitaxy

1999 ◽  
Vol 216 (1) ◽  
pp. 125-129 ◽  
Author(s):  
I.A. Buyanova ◽  
W.M. Chen ◽  
G. Pozina ◽  
B. Monemar ◽  
H.P. Xin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emission
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