Observation of a two‐dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN‐AlxGa1−xN heterojunctions

1992 ◽  
Vol 60 (24) ◽  
pp. 3027-3029 ◽  
Author(s):  
M. Asif Khan ◽  
J. N. Kuznia ◽  
J. M. Van Hove ◽  
N. Pan ◽  
J. Carter
Keyword(s):  
Electron Gas ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Chemical Vapor Deposited ◽  
Dimensional Electron Gas ◽  
Metalorganic Chemical

Recombination Related to Two-Dimensional Electron Gas of AlxGa1-xN/GaN Single Heterostructures Studied with Picosecond Time-Resolved Photoluminescence

2003 ◽  
Vol 798 ◽  
Author(s):  
Qing Yang ◽  
Rob Armitage ◽  
Eicke R. Weber ◽  
Ronald Birkhahn ◽  
David Gotthold ◽  
...  
Keyword(s):  
Electron Gas ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Time Resolved ◽  
Hall Effect Measurements ◽  
Dimensional Electron Gas ◽  
Time Resolved Photoluminescence

ABSTRACTNearbandgap radiative recombination in undoped AlxGa1-xN/GaN (x = 0.28 to 0.35) single heterostructures grown by metalorganic chemical vapor deposition is investigated using picosecond time-resolved photoluminescence at 11K.Room temperature Hall effect measurements show both high sheet carrier concentrations (∼1×1013 cm-2) and high mobilities (∼1000 cm2/Vs), suggesting the formation of a two-dimensional electron gas (2DEG) at the heterointerface. The luminescence transient of the 3.481 eV emissions, which is usually assigned to donor-bound exciton emission of GaN, consists of an initial fast component and a slow second component. Samples with higher aluminum concentrations show broad luminescence peaks in the spectral range of 3.41—3.45 eV with long decay lifetimes over 1 ns. In addition, the below bandgap emissions saturate at high excitation power and shift toward lower energies with increasing time delay. The observed emissions are explained by the recombination processes involving the 2DEG at the heterointerface.

Observation of a Two-Dimensional Electron Gas in the AlGaN/GaN on SiC Substrates

1996 ◽  
Vol 449 ◽  
Author(s):  
G. C. Chi ◽  
C. F. Lin ◽  
H. C. Cheng ◽  
J. A. Huang ◽  
M. S. Feng ◽  
...  
Keyword(s):  
Electron Gas ◽  
Thick Layer ◽  
Chemical Vapor ◽  
High Electron ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Growth Pressure ◽  
Dimensional Electron Gas ◽  
Gan Film

ABSTRACTGaN/Al0.08 Ga0.92 N heterostructure has been grown on(0001) 6H-SiC substrates using low pressure metalorganic chemical vapor deposition(LP-MOCVD). Triethylgallium (TEGa), trimethylaluminum(TMA) and ammonia(NH3) were used as the Ga, Al and N sources, respectively. The carrier gas is hydrogen(H2)and the growth pressure is kept at 76 torr. Five pairs of GaN/Al0.08 Ga0.92N(100Å/100Å)were used as buffer layer, then follow by an 1.3 μ m GaN film. The 500Å AlGaN bulk structure was grown on the GaN and Finally an 100Å GaN cap layer to prevent the oxidation of AlGaN layer. The full width half maxima(FWHM) of x-ray peak is 115 arc second for the thick layer of GaN (1.3 μ m), this value is smaller than we reported for the GaN on sapphire substrate (It was about 300 arc second). The Hall mobility and sheet carrier concentration are 887 cm2/Vs, 1.0 × 1016cm-2 at 300K and 4661 cm2/Vs, 7.2 × 1012cm-2 at 77K. This high electron mobility is an indication of a two-dimensional electron gas(2DEG) formed at the GaN/AlGaN interface.

Sign in / Sign up

Export Citation Format

Share Document