Structural and electrical properties of BaTiO3thin films grown onp‐InSb substrate by metalorganic chemical vapor deposition at low temperature

1993 ◽  
Vol 62 (15) ◽  
pp. 1788-1790 ◽  
Author(s):  
T. W. Kim ◽  
M. Jung ◽  
H. J. Kim ◽  
Y. S. Yoon ◽  
W. N. Kang ◽  
...  
2000 ◽  
Vol 622 ◽  
Author(s):  
R. Dimitrov ◽  
V. Tilak ◽  
M. Murphy ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  

ABSTRACTIn this study thin AlxGa1−xN nucleation layers on sapphire were patterned and overgrown by plasma-induced molecular beam epitaxy (PIMBE) and metalorganic chemical vapor deposition (MOCVD) to obtain adjacent regions of GaN and AlGaN/GaN heterostructures with different polarities. The role of polarity on the structural and electrical properties of epitaxial layers and AlGaN/GaN heterostructures was investigated for samples grown on patterned AlN or GaN nucleation layers. Epitaxial GaN and AlGaN/GaN heterostructures grown on Al-face AlN or N- face GaN nucleation layers were found to be Ga-face or N-face, respectively, independent of the technique used for the overgrowth.


1993 ◽  
Vol 132 (3-4) ◽  
pp. 414-418 ◽  
Author(s):  
T. Soga ◽  
T. Suzuki ◽  
M. Mori ◽  
Z.K. Jiang ◽  
T. Jimbo ◽  
...  

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