Photoluminescence study of strong interdiffusion in CdTe/CdMnTe quantum wells induced by rapid thermal annealing

1994 ◽  
Vol 64 (6) ◽  
pp. 766-768 ◽  
Author(s):  
D. Tönnies ◽  
G. Bacher ◽  
A. Forchel ◽  
A. Waag ◽  
G. Landwehr
Keyword(s):  
Quantum Wells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Photoluminescence Study

Enhancement of Photoluminescence Intensity of GaInNAs/GaAs Quantum Wells by Two-Step Rapid Thermal Annealing

2006 ◽  
Vol 23 (9) ◽  
pp. 2579-2582
Author(s):  
Zhao Huan ◽  
Xu Ying-Qiang ◽  
Ni Hai-Qiao ◽  
Han Qin ◽  
Wu Rong-Han ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Photoluminescence Intensity

Bandgap Shifting of an Ultra-Thin InGaAs/InP Quantum Well Infrared Photodetector via Rapid Thermal Annealing

1998 ◽  
Vol 525 ◽  
Author(s):  
D. K. Sengupta ◽  
S. Kim ◽  
H. C. Kuo ◽  
A. P. Curtis ◽  
K. C. Hsieh ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Spectral Response ◽  
Energy Levels ◽  
Blue Shift ◽  
Orbital Method ◽  
Quantum Well Infrared Photodetector ◽  
P Type ◽  
Anneal Time

ABSTRACTWe demonstrate that SiO2 cap rapid thermal annealing in ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much as 292.5 meV at 900°C has been measured and the value of the bandgap shift can be controlled by the anneal time. Theoretical modeling of the intermixing effect on the energy levels is performed based on the effective bond-orbital method, and we obtain a very good fit to the photoluminescence data. Compared to the as-grown detector, the peak spectral response of the annealed detector was shifted to longer wavelength without any major degradation in the responsivity characteristics.

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