Time and temperature dependence on rapid thermal annealing of molecular beam epitaxy grown Ga0.8In0.2N0.01As0.99 quantum wells analyzed using photoluminescence

2003 ◽  
Vol 32 (1) ◽  
pp. 29-33 ◽  
Author(s):  
Sridhar Govindaraju ◽  
Jason M. Reifsnider ◽  
Michael M. Oye ◽  
Archie L. Holmes
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Temperature Dependence ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam

Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy

2000 ◽  
Vol 77 (9) ◽  
pp. 1280-1282 ◽  
Author(s):  
Z. Pan ◽  
L. H. Li ◽  
W. Zhang ◽  
Y. W. Lin ◽  
R. H. Wu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam

In-Situ Rapid Thermal Annealing of Heterostructures Grown by Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
M. Cerullo ◽  
Julia M. Phillips ◽  
M. Anzlowar ◽  
L. Pfeiffer ◽  
J. L. Batstone ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
High Vacuum ◽  
Processing Technique ◽  
Ultra High Vacuum ◽  
On Line ◽  
High Vacuum Environment

ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.

Rapid Thermal Annealing and Ion Implantation of Heteroepitaxial ZnSe/GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
B.J. Skromme ◽  
N.G. Stoffel ◽  
A.S. Gozdz ◽  
M.C. Tamargo ◽  
S.M. Shibli
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Vacancy Formation ◽  
Annealing Temperatures ◽  
The Creation ◽  
Zn Vacancy

ABSTRACTWe describe the effects of rapid thermal annealing on the photoluminescence (PL) and electrical properties of heteroepitaxial ZnSe grown by molecular beam epitaxy on GaAs, using either no cap or plasma-deposited SiO2, Si3N4, or diamond-like C caps, and annealing temperatures from 500 to 800°C. Capless anneals (in contact with GaAs) produce badly degraded PL properties, while capped anneals can prevent this degradation. We show that Si3N4 is significantly more effective in preventing Zn out-diffusion through t e cap than previously employed SiO2 films, as evidenced by less pronounced PL features related to the creation of Zn vacancies during the anneal. Implant damage tends to enhance the Zn vacancy formation. Rapid thermal annealing with Si3N4 caps is shown to optically activate shallow N acceptor implants.

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