Current gain increase in AlGaAs/GaAs heterojunction bipolar transistors using AlGaAs layer overgrowth

ABSTRACTA significant degradation of current gain of InP/InGaAs/InP double heterojunction bipolar transistors was observed after passivation. The amount of degradation depended on the degree of surface exposure of the p-type InGaAs base layer according to the epi-structure and device structure. The deposition conditions such as deposition temperature, kinds of materials (silicon oxide, silicon nitride and aluminum oxide) and film thickness were not major variables to affect the device performance. The gain reduction was prevented by the BOE treatment before the passivation. A possible explanation of this behavior is that unstable non-stoichiometric surface states produced by excess In, Ga, or As after mesa etching are eliminated by BOE treatment and reduce the surface recombination sites.

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Current gain deterioration in carbon-doped AlGaAs/GaAs heterojunction bipolar transistors during high-temperature bias stress tests

Materials Science and Engineering B ◽

10.1016/0921-5107(94)90059-0 ◽

1994 ◽

Vol 28 (1-3) ◽

pp. 257-260 ◽

Cited By ~ 10

Author(s):

T. Ishibashi ◽

H. Sugahara ◽

H. Ito ◽

T. Nittono ◽

K. Nagata ◽

...

Keyword(s):

High Temperature ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

Stress Tests ◽

Carbon Doped ◽

Temperature Bias ◽

Bias Stress

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A New Application of a-SiC Films for Realizing High Current Gain Si Heterojunction Bipolar Transistors

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_46 ◽

1992 ◽

pp. 322-325

Author(s):

K. Sasaki ◽

T. Miyajima ◽

S. Furukawa

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Sic Films

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Improvement of current gain of C-doped GaAsSb-base heterojunction bipolar transistors by using an InAlP emitter

Applied Physics Letters ◽

10.1063/1.1995948 ◽

2005 ◽

Vol 87 (2) ◽

pp. 023503 ◽

Cited By ~ 28

Author(s):

Yasuhiro Oda ◽

Haruki Yokoyama ◽

Kenji Kurishima ◽

Takashi Kobayashi ◽

Noriyuki Watanabe ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain

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Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning

Semiconductor Science and Technology ◽

10.1088/0268-1242/21/3/017 ◽

2006 ◽

Vol 21 (3) ◽

pp. 303-305 ◽

Cited By ~ 14

Author(s):

Y S Lin ◽

D H Huang ◽

W C Hsu ◽

K H Su ◽

T B Wang

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

Double Heterojunction

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The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.481724 ◽

1996 ◽

Vol 43 (2) ◽

pp. 245-251 ◽

Cited By ~ 85

Author(s):

W. Liu ◽

A. Khatibzadeh ◽

J. Sweder ◽

Hin-Fai Chau

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain

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High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2006.10.231 ◽

2007 ◽

Vol 298 ◽

pp. 852-856 ◽

Cited By ~ 6

Author(s):

T. Chung ◽

D.M. Keogh ◽

J.-H. Ryou ◽

D. Yoo ◽

J. Limb ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Metalorganic Chemical

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Comparative Study on Reliability of InP/InGaAs Heterojunction Bipolar Transistors with Highly Zn- and C-Doped Base Layers

MRS Proceedings ◽

10.1557/proc-1195-b06-02 ◽

2009 ◽

Vol 1195 ◽

Cited By ~ 1

Author(s):

Atsushi Koizumi ◽

Kazuki Oshitanai ◽

Jaesung Lee ◽

Kazuo Uchida ◽

Shinji Nozaki

Keyword(s):

Raman Spectroscopy ◽

Heterojunction Bipolar Transistors ◽

Stress Test ◽

Bipolar Transistors ◽

Current Gain ◽

Photoluminescence Intensity ◽

Initial Current ◽

Carbon Doped ◽

Organic Vapor ◽

Metal Organic

AbstractThe reliability of InP/InGaAs heterojunction bipolar transistors (HBTs) with highly carbon-doped and zinc-doped InGaAs base layers grown by metal-organic vapor phase epitaxy has been investigated. The Raman spectroscopy reveals that the post-growth annealing for the carbon-doped InGaAs base improves the crystallinity to become as good as that of the zinc-doped InGaAs base. However, the photoluminescence intensity remains lower than that of the zinc-doped InGaAs even after the post-growth annealing. The current gains of the carbon- and zinc-doped base InP/InGaAs HBTs are 63 and 75, respectively, and they are affected by the base crystallinity. After the 15-min current stress test, the current gains decreased by 40 and 3% from the initial current gains for zinc- and carbon-doped base HBTs, respectively, are observed. These results indicate that the carbon-doped base HBT is much more reliable than that of zinc-doped base HBT, though it has a lower current gain.

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