Explanation for the temperature insensitivity of the Auger recombination rates in 1.55 μm InP‐based strained‐layer quantum‐well lasers

1995 ◽  
Vol 66 (23) ◽  
pp. 3093-3095 ◽  
Author(s):  
Shunji Seki ◽  
Wayne W. Lui ◽  
Kiyoyuki Yokoyama
Keyword(s):  
Quantum Well ◽  
Auger Recombination ◽  
Quantum Well Lasers ◽  
Recombination Rates ◽  
Strained Layer

High-power 0.98-μm strained-layer quantum-well lasers with InGaP cladding

1994 ◽  
Vol 7 (3) ◽  
pp. 139-143 ◽  
Author(s):  
Tetsuro Ijichi ◽  
Michio Ohkubo ◽  
Akira Iketani ◽  
Toshio Kikuta
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Strained Layer

The Nature of Auger Recombination in Type-I Quantum Well Lasers Operating in the Mid-Infrared

2021 ◽  
pp. 1-1
Author(s):  
Timothy David Eales ◽  
Igor Marko ◽  
Alfred R. Adams ◽  
Alexander Andrejew ◽  
Kristijonas Vizbaras ◽  
...  
Keyword(s):  
Quantum Well ◽  
Auger Recombination ◽  
Quantum Well Lasers ◽  
Type I ◽  
Mid Infrared

Low‐threshold InGaAs strained‐layer quantum‐well lasers (λ=0.98 μm) with GaInP cladding layers and mass‐transported buried heterostructure

1992 ◽  
Vol 60 (1) ◽  
pp. 6-8 ◽  
Author(s):  
Z. L. Liau ◽  
S. C. Palmateer ◽  
S. H. Groves ◽  
J. N. Walpole ◽  
L. J. Missaggia
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Buried Heterostructure ◽  
Low Threshold ◽  
Cladding Layers

Auger recombination in long-wavelength quantum-well lasers

1984 ◽  
Vol 20 (21) ◽  
pp. 893 ◽  
Author(s):  
C. Smith ◽  
R.A. Abram ◽  
M.G. Burt
Keyword(s):  
Quantum Well ◽  
Auger Recombination ◽  
Quantum Well Lasers ◽  
Long Wavelength

Role of growth temperature in GSMBE growth of strained-layer InGaAs/GaAs quantum well lasers

1993 ◽  
Vol 127 (1-4) ◽  
pp. 209-212 ◽  
Author(s):  
G. Zhang ◽  
A. Ovtchinnikov ◽  
M. Pessa
Keyword(s):  
Quantum Well ◽  
Growth Temperature ◽  
Quantum Well Lasers ◽  
Strained Layer

Low‐threshold 1.3‐μm wavelength, InGaAsP strained‐layer multiple quantum well lasers grown by gas source molecular beam epitaxy

1994 ◽  
Vol 65 (7) ◽  
pp. 892-894 ◽  
Author(s):  
Guang‐Jye Shiau ◽  
Chih‐Ping Chao ◽  
Paul E. Burrows ◽  
Stephen R. Forrest
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Strained Layer ◽  
Gas Source ◽  
Low Threshold

Low‐threshold InGaAs strained‐layer quantum well lasers (λ=0.98 μm) with GaInP cladding layers prepared by chemical beam epitaxy

1992 ◽  
Vol 61 (7) ◽  
pp. 755-757 ◽  
Author(s):  
W. T. Tsang ◽  
R. Kapre ◽  
M. C. Wu ◽  
Y. K. Chen
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Chemical Beam Epitaxy ◽  
Strained Layer ◽  
Low Threshold ◽  
Cladding Layers
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