Low (2.0 kA/cm2) threshold current density operation of 629 nm GaInP/AlInP multiquantum well lasers grown by gas source molecular beam epitaxy on 15° off (100) GaAs substrates

1991 ◽  
Vol 27 (14) ◽  
pp. 1301 ◽  
Author(s):  
A. Kikuchi ◽  
K. Kishino ◽  
Y. Kaneko
Keyword(s):  
Molecular Beam Epitaxy ◽  
Current Density ◽  
Molecular Beam ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Gas Source ◽  
Gaas Substrates ◽  
Multiquantum Well

Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy

2009 ◽  
Vol 45 (1) ◽  
pp. 50 ◽  
Author(s):  
D. Zhou ◽  
R. Piron ◽  
M. Dontabactouny ◽  
O. Dehaese ◽  
F. Grillot ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Current Density ◽  
Molecular Beam ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Dash ◽  
Low Threshold

Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates

1987 ◽  
Vol 26 (Part 2, No. 4) ◽  
pp. L302-L305 ◽  
Author(s):  
Toshiro Hayakawa ◽  
Masafumi Kondo ◽  
Takahiro Suyama ◽  
Kosei Takahashi ◽  
Saburo Yamamoto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Current Density ◽  
Molecular Beam ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers
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