Technique to monitor the local temperature rise during laser irradiation of transparent dielectrics

1998 ◽  
Vol 69 (2) ◽  
pp. 603-604
Author(s):  
G. Asbury ◽  
P. Bunton
1989 ◽  
Vol 158 ◽  
Author(s):  
Y. F. LU. M. Takai ◽  
H. Sanda ◽  
A. Chayahara ◽  
M. Satou ◽  
T. Minamisono ◽  
...  

ABSTRACTThe change in the behavior of laser—induced etching of Mn—Zn ferrite by MeV ion implantation has been investigated. The etching induced by Ar+ laser irradiation in a H3PO4 solutipn w~s completely suppressed by implanting 3 MeV Au+ to a dose of 1x1016 cm-2 when the laser induced local temperature rise was below the melting point of the ferrite. The etching suppression disappeared when the Au+ implanted sample was thermally annealed at 900 ºC for 30 min. The suppression is found to be related to the crystallinity change induced by ion implantation.


1992 ◽  
Vol 31 (Part 2, No. 12A) ◽  
pp. L1686-L1688 ◽  
Author(s):  
Jae S. Yoo ◽  
Myeong S. Oh ◽  
Hea S. Park ◽  
Seung T. Jung ◽  
Gueorgui T. Park ◽  
...  

1985 ◽  
Vol 24 (Part 2, No. 9) ◽  
pp. L705-L708 ◽  
Author(s):  
Mikio Takai ◽  
Hiroyuki Nakai ◽  
Jun'ichi Tsuchimoto ◽  
Kenji Gamo ◽  
Susumu Namba

Sign in / Sign up

Export Citation Format

Share Document