Two‐wave mixing in Stark geometry photorefractive quantum wells using moving gratings

1996 ◽  
Vol 69 (22) ◽  
pp. 3414-3416 ◽  
Author(s):  
I. Lahiri ◽  
R. M. Brubaker ◽  
D. D. Nolte ◽  
M. R. Melloch
2014 ◽  
Vol 23 (03) ◽  
pp. 1450029 ◽  
Author(s):  
Błażej Jabłoński

The kind of defects and their concentration have a significant impact on photorefractive phenomena taking place within the structure of semi-insulating GaAs / AlGaAs multiple quantum wells. In this paper, the impact of donor-to-acceptor concentration ratio on the grating in photorefractive two-waves mixing was examined. The formation of the space charge field for different defect concentrations as well as different external electric field intensities are analyzed.


1995 ◽  
Vol 12 (6) ◽  
pp. 358-361
Author(s):  
Hu Chengyong ◽  
Zhang Zhiguo ◽  
Kang Jing ◽  
Feng Wei ◽  
Hu Qiang ◽  
...  

1991 ◽  
Vol 59 (3) ◽  
pp. 256-258 ◽  
Author(s):  
Q. N. Wang ◽  
D. D. Nolte ◽  
M. R. Melloch

1999 ◽  
Author(s):  
Yanfeng Zhang ◽  
Jiaming Sun ◽  
Manhong Zhang ◽  
Zhiguo Zhang ◽  
Qi Huang ◽  
...  

1992 ◽  
Vol 261 ◽  
Author(s):  
Q. Wang ◽  
R. M. Brubaker ◽  
D. D. Nolte ◽  
M. R. Melloch

ABSTRACTHigh-order spatial harmonics of photo-induced space-charge gratings are observed in semi-insulating photorefractive quantum wells. Two-wave mixing combined with four-wave mixing in holographic thin films can provide a versatile probe of absorption and photorefractive gratings.


2000 ◽  
Vol 76 (16) ◽  
pp. 2185-2187 ◽  
Author(s):  
Y. F. Zhang ◽  
J. M. Sun ◽  
M. H. Zhang ◽  
Z. G. Zhang ◽  
Q. Huang ◽  
...  

2016 ◽  
Vol 8 (4) ◽  
pp. 125
Author(s):  
Blazej Jablonski ◽  
Andrzej Ziolkowski ◽  
Agnieszka Branecka ◽  
Ewa Weinert-Raczka

Semiconductor photorefractive quantum wells belong to materials with strong optical nonlinearity. One of the parameters that may affect the course of nonlinear phenomena in these materials is the electron and hole trapping coefficient. We present the results of a numerical analysis aimed to find out, how electric field-dependent trapping coefficients affect the process of space-charge field formation in multiple quantum wells in the phenomenon of photorefractive two-wave mixing. Full Text: PDF ReferencesQ. Wang, R. M. Brubaker, D. D. Nolte and M. R. Melloch, "Photorefractive quantum wells: transverse Franz-Keldysh geometry," J. Opt. Soc. Am. B 9, 1626 (1992) CrossRef D.D. Nolte and M.R. Melloch, in: Photorefractive effects and Materials, Chap.6, ed. by D. D. Nolte (Kluwer Academic, Boston, 1995) CrossRef D.D. Nolte, "Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications"", J. Appl. Phys. 85, 6259 (1999) CrossRef Q.Wang, R. M. Brubaker and D. D. Nolte, "Photorefractive phase shift induced by hot-electron transport: Multiple-quantum-well structures", J. Opt. Soc. Am. B 9 (1994) 1773. CrossRef V. Ya. Prinz, S. N. Rechkunov, "Influence of a Strong Electric Field on the Carrier Capture by nonradiative Deep-Level Centers in GaAs", Phys. Stat. Sol. (b) 118, 159 (1983) CrossRef S.M. Sze, Physics of Semiconductors Devices, second ed., Wiley, New York, 1981 (Chapter 10) DirectLink B. Jablonski, "Impact of donor compensation ratio on photorefractive two-wave mixing dynamics in multiple quantum wells structures", JNOPM 23, 1450029 (2014) CrossRef


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