Rapid solid phase crystallization of nanocrystalline silicon deposited by electron cyclotron plasma chemical vapor deposition

1996 ◽  
Vol 69 (13) ◽  
pp. 1873-1875 ◽  
Author(s):  
S. Holgado ◽  
J. Martínez ◽  
J. Garrido ◽  
C. Morant ◽  
J. Piqueras
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Electron Cyclotron ◽  
Plasma Chemical ◽  
Solid Phase Crystallization ◽  
Plasma Chemical Vapor Deposition

Effects of hydrogen on the growth of nanocrystalline silicon films by electron-beam excited plasma chemical vapor deposition

2000 ◽  
Vol 88 (11) ◽  
pp. 6848-6855 ◽  
Author(s):  
Mitsuru Imaizumi ◽  
Koji Yamaguchi ◽  
Kazuhiko Okitsu ◽  
Masafumi Yamaguchi ◽  
Tamio Hara ◽  
...  
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Nanocrystalline Silicon Films

Influence of Argon Flow on Deposition of Hydrogenated Nanocrystalline Silicon (nc-Si:H) Films by Plasma Chemical Vapor Deposition

2009 ◽  
Vol 5 ◽  
pp. 185-191 ◽  
Author(s):  
A.M. Funde ◽  
N.A. Bakr ◽  
T.S. Salve ◽  
K.D. Diwate ◽  
D.K. Kamble ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Dark Conductivity ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Glass Substrates

In this work we report synthesis and characterization of hydrogenated nanocrystalline silicon (nc-Si:H) thin films by plasma chemical vapor deposition (P-CVD) method at 200 0C on glass substrates. Film properties are carefully and systematically investigated as a function of argon (Ar) flow rate. Characterization of these films with Raman spectroscopy revealed that the addition of Ar into SiH4-H2 plasma endorses the growth of crystallinity in the films. The Fourier transform infrared (FTIR) spectroscopic analysis showed that with increasing Ar flow rate the hydrogen bonding in the films shifts from mono-hydride (Si-H) to di-hydride (Si-H2) and (Si-H2)n complexes. The hydrogen content in the films was found < 7 at. % over the entire range of studied Ar flow rate. The band gap of nc-Si:H films was found to be higher than hydrogenated amorphous silicon (a-Si:H) films (> 2 eV). The nc-Si:H films with dark conductivity 1.3x10-7 S/cm having deposition rate as high as 2.5 Å/s and of crystalline fraction 98 % have been obtained.

Sign in / Sign up

Export Citation Format

Share Document