Transconductance oscillations in metal–oxide–semiconductor field-effect transistors with thin silicon-on-insulator originated by quantized energy levels

Energy Levels ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Thin Silicon

Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3360224 ◽

2010 ◽

Vol 96 (11) ◽

pp. 112102 ◽

Cited By ~ 7

Author(s):

J. Noborisaka ◽

K. Nishiguchi ◽

H. Kageshima ◽

Y. Ono ◽

A. Fujiwara

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Tunneling Spectroscopy ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Thin Silicon

Observation of gate bias dependent interface coupling in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2767844 ◽

2007 ◽

Vol 102 (3) ◽

pp. 034509 ◽

Cited By ~ 2

Author(s):

YoungChai Jung ◽

KeunHwi Cho ◽

SungWoo Hwang ◽

David Ahn ◽

YunSeop Yu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Gate Bias ◽

Interface Coupling ◽

Thin Silicon

Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Cost Effective ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1378329 ◽

2001 ◽

Vol 90 (2) ◽

pp. 866-870 ◽

Cited By ~ 6

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Inversion Layer ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Self Consistent ◽

Doped Silicon

Comparisons of Radio-Frequency Performance of Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect-Transistors

10.1143/jjap.46.7635 ◽

2007 ◽

Vol 46 (12) ◽

pp. 7635-7638 ◽

Cited By ~ 2

Author(s):

Yasushi Hiraoka ◽

Satoshi Matsumoto

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor

Self-Aligned Asymmetric Metal–Oxide–Semiconductor Field Effect Transistors Fabricated on Silicon-on-Insulator

10.1143/jjap.48.091201 ◽

2009 ◽

Vol 48 (9) ◽

pp. 091201

Author(s):

Jong Pil Kim ◽

Jae Young Song ◽

Sang Wan Kim ◽

Jae Hyun Park ◽

Woo Young Choi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor

Modeling the performance of short-channel fully depleted silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs)

Silicon-On-Insulator (SOI) Technology ◽

10.1533/9780857099259.1.77 ◽

2014 ◽

pp. 77-101

Author(s):

S. Ghosh

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted

Investigation of Mobility Enhancement Effect in Process-Induced Strained Ultrathin Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

10.1143/jjap.47.2124 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2124-2126 ◽

Cited By ~ 1

Author(s):

Akiko Ohata ◽

Claire Gallon ◽

Claire Fenouillet-Beranger ◽

Sorin Cristoloveanu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Enhancement Effect

Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

10.1143/jjap.50.04dc12 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DC12 ◽

Cited By ~ 1

Author(s):

Shuhei Amakawa ◽

Asato Toda ◽

Katsuroh Ohyama ◽

Naoya Higashiguchi ◽

Daisuke Hori ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Substrate Current ◽

History Effect ◽

Universal Relationship

Consideration of Performance Limitation of Sub-100-nm Double-Gate Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

10.1143/jjap.41.l1096 ◽

2002 ◽

Vol 41 (Part 2, No. 10A) ◽

pp. L1096-L1098 ◽

Cited By ~ 2

Author(s):

Shin-ichiro Yanagi ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Performance Limitation