High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures

1999 ◽  
Vol 75 (15) ◽  
pp. 2268-2270 ◽  
Author(s):  
F. A. Khan ◽  
I. Adesida
Keyword(s):  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Gas Mixtures ◽  
High Rate ◽  
Ion Etching ◽  
Inductively Coupled

Inductively Coupled Plasma Reactive Ion Etching of Ge-SiO2 and SiON Using C2F6 and NF3-Based Gas Mixtures

2007 ◽  
Vol 124-126 ◽  
pp. 503-506
Author(s):  
N.J. Kim ◽  
S.Y. Lee ◽  
G.K. Lee ◽  
J.H. Moon ◽  
Byung Teak Lee
Keyword(s):  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Gas Mixtures ◽  
Smooth Surfaces ◽  
Ion Etching ◽  
X Ray ◽  
Inductively Coupled ◽  
Silica Glasses

Inductively coupled plasma reactive ion etching of Ge doped silica glasses and SiON was investigated, using C2F6- and NF3-based gas mixtures. Mesas with smooth surfaces and vertical sidewalls were obtained, with a maximum etch rate of about 310nm/min in the case of C2F6 RIE of Ge-SiO2 and 280 nm/min in the case of SiON. The NF3 plasma yielded slightly higher etch rate, although sloped sidewalls were obtained. Results of the X-ray photoelectron spectroscopy showed little contamination on the etched surfaces.

Deep RIE Process for Silicon Carbide Power Electronics and MEMS

2000 ◽  
Vol 622 ◽  
Author(s):  
Glenn Beheim ◽  
Carl S. Salupo
Keyword(s):  
Silicon Carbide ◽  
Power Electronics ◽  
Inductively Coupled Plasma ◽  
High Selectivity ◽  
Reactive Ion Etching ◽  
High Rate ◽  
Etch Depth ◽  
Ion Etching ◽  
Inductively Coupled ◽  
Anisotropic Etch

ABSTRACTReactive ion etching (RIE) of silicon carbide (SiC) to depths ranging from 10 μm to more than 100 μm is required for the fabrication of SiC power electronics and SiC MEMS. A deep RIE process using an inductively coupled plasma (ICP) etch system has been developed which provides anisotropic etch profiles and smooth etched surfaces, a high rate (3000 Å/min), and a high selectivity (80:1) to the etch mask. An etch depth of 100 μm is demonstrated.

Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching

2013 ◽  
Vol 22 (10) ◽  
pp. 106802
Author(s):  
Bo Wang ◽  
Shi-Chen Su ◽  
Miao He ◽  
Hong Chen ◽  
Wen-Bo Wu ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Inductively Coupled

scholarly journals Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics

2002 ◽  
Author(s):  
M. N. Palmisiano ◽  
G. M. Peake ◽  
R. J. Shul ◽  
C. I. Ashby ◽  
J. G. Cederberg ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Inductively Coupled
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