Deep RIE Process for Silicon Carbide Power Electronics and MEMS
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ABSTRACTReactive ion etching (RIE) of silicon carbide (SiC) to depths ranging from 10 μm to more than 100 μm is required for the fabrication of SiC power electronics and SiC MEMS. A deep RIE process using an inductively coupled plasma (ICP) etch system has been developed which provides anisotropic etch profiles and smooth etched surfaces, a high rate (3000 Å/min), and a high selectivity (80:1) to the etch mask. An etch depth of 100 μm is demonstrated.
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2004 ◽
Vol 43
(1)
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pp. 82-85
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2014 ◽
Vol 211
(10)
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pp. 2343-2346
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Reactive ion etching of Pb(Zr[sub x]Ti[sub 1−x])O[sub 3] thin films in an inductively coupled plasma
1998 ◽
Vol 16
(4)
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pp. 1894
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