Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures

2000 ◽  
Vol 77 (23) ◽  
pp. 3758-3760 ◽  
Author(s):  
Chii-Chang Chen ◽  
Hui-Wen Chuang ◽  
Gou-Chung Chi ◽  
Chang-Cheng Chuo ◽  
Jen-Inn Chyi
1996 ◽  
Vol 449 ◽  
Author(s):  
D. A. S. Loeber ◽  
N. G. Anderson ◽  
J. M. Redwing ◽  
J. S. Flynn ◽  
G. M. Smith ◽  
...  

ABSTRACTStimulated emission characteristics are examined for GaN-AlGaN separate-confinement quantum-well heterostructures grown by MOVPE on 4H-SiC substrates. We specifically focus on comparison of structures with different quantum well active region designs. Polarization resolved edge emission spectra and stimulated emission thresholds are obtained under optical pumping using a stripe excitation geometry. Stimulated emission characteristics are studied as a function of the number of quantum wells in the structure, and are correlated with surface photoluminescence properties. We find reduced stimulated emission thresholds and increased surface photoluminescence intensities as the number of quantum wells is reduced, with the best results obtained for a single-quantum-well structure. These results should provide useful information for the design of GaN-based quantum well lasers.


2004 ◽  
Vol 273 (1-2) ◽  
pp. 48-53 ◽  
Author(s):  
T. Wang ◽  
P.J. Parbrook ◽  
M.A. Whitehead ◽  
W.H. Fan ◽  
A.M. Fox

2000 ◽  
Author(s):  
Chii-Chang Chen ◽  
HuiWen Chuang ◽  
GouChung Chi ◽  
ChangCheng Chuo ◽  
Jen-Inn Chyi

2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 2281-2283 ◽  
Author(s):  
Chin-Hsiang Chen ◽  
Shoou-Jinn Chang ◽  
Yan-Kuin Su

2000 ◽  
Vol 76 (3) ◽  
pp. 318-320 ◽  
Author(s):  
Chi-Chih Liao ◽  
Shih-Wei Feng ◽  
C. C. Yang ◽  
Yen-Sheng Lin ◽  
Kung-Jen Ma ◽  
...  

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