Near-field scanning microwave probe based on a dielectric resonator

2001 ◽  
Vol 72 (4) ◽  
pp. 2073-2079 ◽  
Author(s):  
M. Abu-Teir ◽  
M. Golosovsky ◽  
D. Davidov ◽  
A. Frenkel ◽  
H. Goldberger
Keyword(s):  
Dielectric Resonator ◽  
Near Field ◽  
Microwave Probe ◽  
Near Field Scanning

Scanning Near-Field Microwave Probe for In-line Metrology of Low-K Dielectrics

2004 ◽  
Vol 812 ◽  
Author(s):  
Vladimir V. Talanov ◽  
Robert L. Moreland ◽  
André Scherz ◽  
Andrew R. Schwartz ◽  
Youfan Liu
Keyword(s):  
Near Field ◽  
Spot Size ◽  
Excellent Correlation ◽  
K Value ◽  
Microwave Probe ◽  
Near Field Scanning ◽  
Non Destructive ◽  
Low K ◽  
Probe Measurements ◽  
Better Than

AbstractWe have developed a novel microwave near-field scanning probe technique for non-contact measurement of the dielectric constant of low-k films. The technique is non-destructive, noninvasive and can be used on both porous and non-porous dielectrics without any sample preparation. The probe has a few-micron spot size, which makes the technique well suited for real time low-k metrology on production wafers. For dielectrics with k<4 the precision and accuracy are better than 2% and 5%, respectively. Results for both SOD and CVD low-k films are presented and show excellent correlation with Hg-probe measurements. Results for k-value mapping on blanket 200mm wafers are presented as well.

Near-field Scanning Microwave Probe for Rapid Detection of Nonvisual and Parametric Defects in Cu/low-k Interconnect on Production Wafers

2006 ◽  
Author(s):  
Vladimir V. Talanov ◽  
Andrew R. Schwartz
Keyword(s):  
Failure Analysis ◽  
Rapid Detection ◽  
Near Field ◽  
Electrical Measurements ◽  
Visual Defects ◽  
Microwave Probe ◽  
Near Field Scanning ◽  
Low K

Abstract We demonstrate the use of a near-field scanned microwave probe (NSMP) for failure analysis (FA) of parametric defects in Cu/low-k interconnect that leave no physical remnant (sometimes referred to as “non-visual defects”). This technique is rapid, quantitative, non-contact, and provides direct electrical measurements.

Near-field scanning microwave microscope using a dielectric resonator

2003 ◽  
Vol 83 (5) ◽  
pp. 1032-1034 ◽  
Author(s):  
Jooyoung Kim ◽  
Kiejin Lee ◽  
Barry Friedman ◽  
Deokjoon Cha
Keyword(s):  
Dielectric Resonator ◽  
Near Field ◽  
Microwave Microscope ◽  
Near Field Scanning

Near-field scanning optical microscopy

1986 ◽  
Vol 44 ◽  
pp. 642-643
Author(s):  
E. Betzig ◽  
A. Harootunian ◽  
M. Isaacson ◽  
A. Lewis
Keyword(s):  
Near Field ◽  
Optical Microscope ◽  
Visible Radiation ◽  
Field Methods ◽  
Optical Elements ◽  
Optical Region ◽  
Order Of Magnitude ◽  
Nondestructive Imaging ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

In general, conventional methods of optical imaging are limited in spatial resolution by either the wavelength of the radiation used or by the aberrations of the optical elements. This is true whether one uses a scanning probe or a fixed beam method. The reason for the wavelength limit of resolution is due to the far field methods of producing or detecting the radiation. If one resorts to restricting our probes to the near field optical region, then the possibility exists of obtaining spatial resolutions more than an order of magnitude smaller than the optical wavelength of the radiation used. In this paper, we will describe the principles underlying such "near field" imaging and present some preliminary results from a near field scanning optical microscope (NS0M) that uses visible radiation and is capable of resolutions comparable to an SEM. The advantage of such a technique is the possibility of completely nondestructive imaging in air at spatial resolutions of about 50nm.

Near Field EMC Scanning Method Based on an E-Field Collapse

2015 ◽  
Author(s):  
Jeff Dunnihoo ◽  
Pasi Tamminen ◽  
Toni Viheriäkoski
Keyword(s):  
Near Field ◽  
Electronic Systems ◽  
Inexpensive Method ◽  
Scanning Method ◽  
Field Information ◽  
Novel Method ◽  
Near Field Scanning

Abstract In this study we present a novel method to use a field collapse method together with fully automated near field scanning equipment to construct E- and H-field information of a system during transient ESD events. This inexpensive method provides an alternative way for system designers to validate and analyze the EMC/ESD capability of electronic systems without TLP pulsers, ESD simulators, or precision inductive current probes.

scholarly journals Improvement of spatial resolution by tilt correction in near-field scanning microwave microscopy

AIP Advances ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 035114
Author(s):  
Xianfeng Zhang ◽  
Zhe Wu ◽  
Quansong Lan ◽  
Zhiliao Du ◽  
Quanxin Zhou ◽  
...  
Keyword(s):  
Spatial Resolution ◽  
Near Field ◽  
Tilt Correction ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Near Field Scanning

Raman imaging with near‐field scanning optical microscopy

1995 ◽  
Vol 67 (17) ◽  
pp. 2483-2485 ◽  
Author(s):  
C. L. Jahncke ◽  
M. A. Paesler ◽  
H. D. Hallen
Keyword(s):  
Optical Microscopy ◽  
Near Field ◽  
Raman Imaging ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning
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