Near-field Scanning Microwave Probe for Rapid Detection of Nonvisual and Parametric Defects in Cu/low-k Interconnect on Production Wafers

2006 ◽  
Author(s):  
Vladimir V. Talanov ◽  
Andrew R. Schwartz
Keyword(s):  
Failure Analysis ◽  
Rapid Detection ◽  
Near Field ◽  
Electrical Measurements ◽  
Visual Defects ◽  
Microwave Probe ◽  
Near Field Scanning ◽  
Low K

Abstract We demonstrate the use of a near-field scanned microwave probe (NSMP) for failure analysis (FA) of parametric defects in Cu/low-k interconnect that leave no physical remnant (sometimes referred to as “non-visual defects”). This technique is rapid, quantitative, non-contact, and provides direct electrical measurements.

Scanning Near-Field Microwave Probe for In-line Metrology of Low-K Dielectrics

2004 ◽  
Vol 812 ◽  
Author(s):  
Vladimir V. Talanov ◽  
Robert L. Moreland ◽  
André Scherz ◽  
Andrew R. Schwartz ◽  
Youfan Liu
Keyword(s):  
Near Field ◽  
Spot Size ◽  
Excellent Correlation ◽  
K Value ◽  
Microwave Probe ◽  
Near Field Scanning ◽  
Non Destructive ◽  
Low K ◽  
Probe Measurements ◽  
Better Than

AbstractWe have developed a novel microwave near-field scanning probe technique for non-contact measurement of the dielectric constant of low-k films. The technique is non-destructive, noninvasive and can be used on both porous and non-porous dielectrics without any sample preparation. The probe has a few-micron spot size, which makes the technique well suited for real time low-k metrology on production wafers. For dielectrics with k<4 the precision and accuracy are better than 2% and 5%, respectively. Results for both SOD and CVD low-k films are presented and show excellent correlation with Hg-probe measurements. Results for k-value mapping on blanket 200mm wafers are presented as well.

Near-field scanning microwave probe based on a dielectric resonator

2001 ◽  
Vol 72 (4) ◽  
pp. 2073-2079 ◽  
Author(s):  
M. Abu-Teir ◽  
M. Golosovsky ◽  
D. Davidov ◽  
A. Frenkel ◽  
H. Goldberger
Keyword(s):  
Dielectric Resonator ◽  
Near Field ◽  
Microwave Probe ◽  
Near Field Scanning

Advanced Electrical Characterization of 90 nm Soft Bit Failure by Nano Probing Technique

2005 ◽  
Author(s):  
Christelle Giret ◽  
Damien Faure
Keyword(s):  
Failure Analysis ◽  
Electrical Characterization ◽  
Physical Analysis ◽  
Electrical Measurements ◽  
Device Failure ◽  
Sram Cell ◽  
Visual Defects ◽  
Difficult Challenge ◽  
Type Of Failure

Abstract The Soft Bit failure (Single Bit Failure sensitive to voltage) of a 90nm SRAM cell presented a difficult challenge for the Failure Analysis (FA) group. Physical analysis of these Soft SRAM failures did not show any visual defects; therefore the FA required an accurate electrical characterization. The transistor characteristics of the failing SRAM transistors are needed in order to speculate on the possible failure mechanism. The Nano-Probing technique performed at Nice Device Failure Analysis of Laboratory (NDAL) allowed us to identify anomalies of I/V characteristics like Vt imbalance, low Gain, asymmetrical Vt, ID (Drive current) and Ron. Case studies of an asymmetry phenomenon reported here lead to a correlation between the failure mode and the electrical measurements. This paper demonstrates a suitable electrical methodology and characterization by Nano-Probing in order to successfully manage a FA approach on this type of failure.

scholarly journals Noncontact dielectric constant metrology of low-k interconnect films using a near-field scanned microwave probe

2006 ◽  
Vol 88 (19) ◽  
pp. 192906 ◽  
Author(s):  
Vladimir V. Talanov ◽  
André Scherz ◽  
Robert L. Moreland ◽  
Andrew R. Schwartz
Keyword(s):  
Dielectric Constant ◽  
Near Field ◽  
Microwave Probe ◽  
Low K

Near-field scanning optical microscopy

1986 ◽  
Vol 44 ◽  
pp. 642-643
Author(s):  
E. Betzig ◽  
A. Harootunian ◽  
M. Isaacson ◽  
A. Lewis
Keyword(s):  
Near Field ◽  
Optical Microscope ◽  
Visible Radiation ◽  
Field Methods ◽  
Optical Elements ◽  
Optical Region ◽  
Order Of Magnitude ◽  
Nondestructive Imaging ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

In general, conventional methods of optical imaging are limited in spatial resolution by either the wavelength of the radiation used or by the aberrations of the optical elements. This is true whether one uses a scanning probe or a fixed beam method. The reason for the wavelength limit of resolution is due to the far field methods of producing or detecting the radiation. If one resorts to restricting our probes to the near field optical region, then the possibility exists of obtaining spatial resolutions more than an order of magnitude smaller than the optical wavelength of the radiation used. In this paper, we will describe the principles underlying such "near field" imaging and present some preliminary results from a near field scanning optical microscope (NS0M) that uses visible radiation and is capable of resolutions comparable to an SEM. The advantage of such a technique is the possibility of completely nondestructive imaging in air at spatial resolutions of about 50nm.

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