Extraction of trap states in laser-crystallized polycrystalline-silicon thin-film transistors and analysis of degradation by self-heating

2002 ◽  
Vol 91 (6) ◽  
pp. 3855-3858 ◽  
Author(s):  
Mutsumi Kimura ◽  
Satoshi Inoue ◽  
Tatsuya Shimoda ◽  
Simon W.-B. Tam ◽  
O. K. Basil Lui ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Trap States ◽  
Silicon Thin Film ◽  
Self Heating

scholarly journals Device Simulation of Polycrystalline-Silicon Thin-Film Transistors with Trap States at Front and Back Oxide Interfaces

2004 ◽  
Vol 58 (9) ◽  
pp. 1242-1247
Author(s):  
Mutsumi Kimura ◽  
Tohru Yasuhara ◽  
Kiyoshi Harada ◽  
Daisuke Abe ◽  
Satoshi Inoue ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Device Simulation ◽  
Trap States ◽  
Silicon Thin Film ◽  
Oxide Interfaces

EFFECT OF TRAP STATES AT THE OXIDE-SILICON INTERFACE IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS

2008 ◽  
Vol 22 (30) ◽  
pp. 5357-5364
Author(s):  
NAVNEET GUPTA
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
State Density ◽  
Trap States ◽  
Silicon Thin Film ◽  
Gate Oxide Thickness ◽  
Silicon Interface

This work presents the study of the effect of trap states at the oxide-silicon interface in lightly doped polycrystalline silicon thin-film transistors with large grains. In this study, it is assumed that the oxide-silicon interface traps are evenly distributed throughout the interface region and single grain boundary is present in the channel of poly-Si TFT. It is shown that improved device characteristics can be obtained by reducing the gate oxide thickness. It is also observed that as gate oxide thickness decreases for a constant value of trap state density in the oxide-silicon interface, the gate voltage required for channel formation is lowered and leads to a decrease in threshold voltage of the device. Calculated and experimental results are also found to be well consistent with each other.

Water-Related Instability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Caused by Self-Heating

2011 ◽  
Vol 50 (3S) ◽  
pp. 03CB04
Author(s):  
Toshiaki Tsuchiya ◽  
Shinzo Tsuboi ◽  
Genshiro Kawachi ◽  
Masakiyo Matsumura
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film ◽  
Self Heating

Self-heating effects in polycrystalline silicon thin film transistors

2006 ◽  
Vol 89 (9) ◽  
pp. 093509 ◽  
Author(s):  
Antonio Valletta ◽  
Alessandro Moroni ◽  
Luigi Mariucci ◽  
Alessandra Bonfiglietti ◽  
Guglielmo Fortunato
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film ◽  
Self Heating ◽  
Heating Effects

Downscaling effects on self-heating related instabilities in p-channel polycrystalline silicon thin film transistors

2011 ◽  
Vol 99 (5) ◽  
pp. 053503 ◽  
Author(s):  
A. Valletta ◽  
P. Gaucci ◽  
L. Mariucci ◽  
A. Pecora ◽  
L. Maiolo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film ◽  
Self Heating

Analysis of Self-Heating-Related Instability in Self-Aligned p-Channel Polycrystalline-Silicon Thin-Film Transistors

2010 ◽  
Vol 31 (8) ◽  
pp. 830-832 ◽  
Author(s):  
P Gaucci ◽  
A Valletta ◽  
L Mariucci ◽  
A Pecora ◽  
L Maiolo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film ◽  
Self Heating

Effect of ELA Energy Density on Self-Heating Stress in Low-Temperature Polycrystalline Silicon Thin-Film Transistors

2020 ◽  
Vol 67 (8) ◽  
pp. 3163-3166
Author(s):  
Shin-Ping Huang ◽  
Hong-Chih Chen ◽  
Po-Hsun Chen ◽  
Yu-Zhe Zheng ◽  
Ann-Kuo Chu ◽  
...  
Keyword(s):  
Thin Film ◽  
Energy Density ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film ◽  
Self Heating
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