Diffusion barrier properties of amorphous TiB2 for application in Cu metallization

2002 ◽  
Vol 91 (9) ◽  
pp. 6099-6104 ◽  
Author(s):  
Joshua Pelleg ◽  
G. Sade
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Cu Metallization

Diffusion Barrier Properties of the Tin Films Prepared by Ecr Pecvd Method

1998 ◽  
Vol 514 ◽  
Author(s):  
Hye-Lyun Park ◽  
Seong-Soo Jang ◽  
Won-Jong Lee
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Device Structure ◽  
Film Properties ◽  
Tin Films ◽  
Cu Metallization ◽  
Tin Film ◽  
Diffusion Barrier Layer ◽  
Via Holes ◽  
Metallization Process

ABSTRACTTiN film is used as a diffusion barrier layer in contact and via holes in the metallization process of the microelectronics. In most cases, TiN film has been prepared by sputtering which has limited conformality. With the shrinkage of the dimension of the device structure there has been an urgent request for new deposition methods which offer better conformality. Recently, modified PVD systems like highly ionized sputtering system and CVD systems like MOCVD and PECVD systems have been developed.We prepared TiN films with TIC4, N2, and H2 in an ECR PECVD system. TiN films prepared at the temperature of 450°C had resistiveity lower than 50 μm Ω cm and better step coverage than those prepared by PVD system. Barrier properties of the TiN films against Cu were investigated and related with the film properties like composition and microstructure.The Cu/TiN/Si structure were annealed in an H2/Ar atmosphere for 30 min at the temperature range from 500 to 600°C.Plasma treatment and thermal treatment during and/or after the deposition in various atmosphere were adopted to change the composition and the microstructure of the TiN films.The composition of the film was analyzed with AES, the microstructure of the film was observed with SEM and the crystallinity was analyzed with XRD. The electrical resistivity was measured with four-point probe method. Barrier properties of the films were studied again Cu metallization. The change in the resistivity and the structure of the Cu/TiN/Si were investigated after the heat-treatment.

Effect of TiN Microstructure on Diffusion Barrier Properties in Cu Metallization

1998 ◽  
Vol 145 (6) ◽  
pp. 2164-2167 ◽  
Author(s):  
Takahiro Kouno ◽  
Hideo Niwa ◽  
Masao Yamada
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Cu Metallization

Diffusion Barrier Properties of Metallorganic Chemical Vapor Deposited Tantalum Nitride Films Against Cu Metallization

1999 ◽  
Vol 146 (10) ◽  
pp. 3724-3730 ◽  
Author(s):  
Sung‐Lae Cho ◽  
Ki‐Bum Kim ◽  
Seok‐Hong Min ◽  
Hyun‐Kook Shin ◽  
Sam‐Dong Kimd
Keyword(s):  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Cu Metallization ◽  
Chemical Vapor Deposited

Effect of substrate bias voltages on the diffusion barrier properties of Zr–N films in Cu metallization

2007 ◽  
Vol 253 (22) ◽  
pp. 8858-8862 ◽  
Author(s):  
Ying Wang ◽  
Chunhui Zhao ◽  
Zhongxiao Song ◽  
Fei Cao ◽  
Dawei Yang
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Substrate Bias ◽  
Cu Metallization

Improvement of Zr-N Diffusion Barrier Performance in Cu Metallization by Insertion of a Thin Zr Layer

2013 ◽  
Vol 347-350 ◽  
pp. 1148-1152
Author(s):  
Yan Nan Zhai ◽  
Hun Zhang ◽  
Kun Yang ◽  
Zhao Xin Wang ◽  
Li Li Zhang
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Fast Diffusion ◽  
X Ray Diffraction ◽  
Multilayered Films ◽  
X Ray ◽  
Cu Metallization ◽  
Cu Film ◽  
Barrier Performance ◽  
Failure Temperature

In order to increase the failure temperature of Zr-N diffusion barrier for Cu, the effect of insertion of a thin Zr layer into Zr-N film on Zr-N diffusion barrier performance in Cu metallization was investigated by means of X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and 4-point probe technique. XRD,SEM ,AES and FPP results show that the insertion of a thin Zr layer into Zr-N film improves barrier properties significantly when the ZrN / Zr/ZrN barrier layers are deposited by RF reactive magnetron sputtering and Zr-N(10nm)/Zr (5nm)/Zr-N(10nm) barrier tolerates annealing at 700°C for 1 h without any breaking and agglomerating Cu film. This interpretes that insertion of a thin Zr layer into Zr-N film is attributed to the densification of grain boundaries in ZrN/Zr/ZrN films followed by the reduction of fast diffusion of Cu through ZrN /Zr/ ZrN multilayered films.

Effects of solvent on the formation of the MUA monolayer on Si and its diffusion barrier properties for Cu metallization

2014 ◽  
Vol 10 (3) ◽  
pp. 671-678 ◽  
Author(s):  
Mohammad Arifur Rahman ◽  
Jung Suk Han ◽  
Kyunghoon Jeong ◽  
Ho-seok Nam ◽  
Jaegab Lee
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Cu Metallization
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