Improvement of Zr-N Diffusion Barrier Performance in Cu Metallization by Insertion of a Thin Zr Layer

2013 ◽  
Vol 347-350 ◽  
pp. 1148-1152
Author(s):  
Yan Nan Zhai ◽  
Hun Zhang ◽  
Kun Yang ◽  
Zhao Xin Wang ◽  
Li Li Zhang
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Fast Diffusion ◽  
X Ray Diffraction ◽  
Multilayered Films ◽  
X Ray ◽  
Cu Metallization ◽  
Cu Film ◽  
Barrier Performance ◽  
Failure Temperature

In order to increase the failure temperature of Zr-N diffusion barrier for Cu, the effect of insertion of a thin Zr layer into Zr-N film on Zr-N diffusion barrier performance in Cu metallization was investigated by means of X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and 4-point probe technique. XRD,SEM ,AES and FPP results show that the insertion of a thin Zr layer into Zr-N film improves barrier properties significantly when the ZrN / Zr/ZrN barrier layers are deposited by RF reactive magnetron sputtering and Zr-N(10nm)/Zr (5nm)/Zr-N(10nm) barrier tolerates annealing at 700°C for 1 h without any breaking and agglomerating Cu film. This interpretes that insertion of a thin Zr layer into Zr-N film is attributed to the densification of grain boundaries in ZrN/Zr/ZrN films followed by the reduction of fast diffusion of Cu through ZrN /Zr/ ZrN multilayered films.

A Study on CVD TaN as a Diffusion Barrier for Cu Interconnects

2000 ◽  
Vol 612 ◽  
Author(s):  
Se-Joon Im ◽  
Soo-Hyun Kim ◽  
Ki-Chul Park ◽  
Sung-Lae Cho ◽  
Ki-Bum Kim
Keyword(s):  
Activation Energy ◽  
Gas Phase ◽  
Diffusion Barrier ◽  
Surface Reaction ◽  
Film Growth ◽  
Ion Beam ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
X Ray Diffraction ◽  
X Ray

AbstractTantalum nitride (TaN) films were deposited using pentakis-diethylamido-tantalum [PDEAT, Ta(N(C2H5)2)5] as a precursor. During film growth, N- and Ar-ion beams with an energy of 120 eV were supplied in order to improve the film quality. In case of thermallydecomposed films, the deposition rate is controlled by the surface reaction up to about 350 °C with an activation energy of about 1.07 eV. The activation energy of the surface reaction controlled regime is decreased to 0.26 eV when the Ar-beam is applied. However, in case of Nbeam bombarded films, the deposition is controlled by the precursor diffusion in gas phase at the whole temperature range. By using Ar-beam, the resistivity of the film is drastically reduced from approximately 10000 µω-cm to 600 µω-cm and the density of the film is increased from 5.85 g/cm3 to 8.26 g/cm3, as compared with thermally-decomposed film. The use of N-beam also considerably lowers the resistivity of films (∼ 800 µω-cm) and increases the density of the films (7.5 g/cm3). Finally, the diffusion barrier properties of 50-nm-thick TaN films for Cu were investigated aftre annealing by X-ray diffraction analysis. The films deposited using N- and Arbeam showed the Cu3Si formation after annealing at 650 °C for 1 hour, while thermallydecomposed films showed Cu3Si peaks firstly after annealing at 600 °C. It is considered that the improvements of the diffusion barrier performance of the films deposited using N- and Ar-ion beam are the consequence of the film densification resulting from the ion bombardment during film growth.

Effect of a Titanium Interlayer on the Performance of the Titanium Nitride Diffusion Barrier

1999 ◽  
Vol 563 ◽  
Author(s):  
K. Y Lu ◽  
J. S. Chen
Keyword(s):  
Sheet Resistance ◽  
Diffusion Barrier ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Average Value ◽  
Cu Metallization ◽  
Glancing Angle ◽  
Tin Diffusion Barrier ◽  
Thermal Stability Of

AbstractWe have studied the effect of a Ti interlayer on the behavior of a TiN diffusion barrier for Al and Cu metallizations. Thermal stability of Al/Ti/TiN/<Si> and Al/TiN/<Si> samples annealed at 400–600°C for 30 min was investigated using Auger electron spectroscopy (AES), glancing angle X-ray diffraction and scanning electron microscopy (SEM). Sheet resistance was measured for electrical characterization.After annealing at 400°C and 500°C, the AI/TiN/<Si> samples exhibited the same sheet resistance as the as-deposited one, while the sheet resistances of the Al/Ti/TiN/<Si> samples increased upon annealing. After annealing at 600°C, pyramidal pits developed on the surface of the Al/TiN/<Si> sample, but not on the Al/Ti/TiN/<Si> sample. Sheet resistance measurements for the 600°C-annealed Al/TiN/<Si> sample resulted in a more scattered distribution and a higher average value than for the Al/Ti/TiN/<Si> sample. The results clearly indicate that the performance of the TiN barrier layer is significantly improved by including a thin Ti film between the TiN and the Al. The Ti interlayer also improves the TiN barrier performance for the Cu metallization system.

The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties

2002 ◽  
Vol 716 ◽  
Author(s):  
H. Kim ◽  
C. Cabral ◽  
C. Lavoie ◽  
S.M. Rossnagel
Keyword(s):  
Thin Films ◽  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Growth Parameters ◽  
Atomic Layer ◽  
Barrier Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Layer Deposition

AbstractTa films were grown by plasma-enhanced atomic layer deposition (PE-ALD) at temperatures from room temperature up to 300 °C using TaCl5 as source gas and RF plasma-produced atomic H as the reducing agent. Post-deposition ex situ chemical analyses showed that the main impurity is oxygen, incorporated during the air exposure prior to analysis with typically low Cl concentration below 1 at %. The X-ray diffraction indicates that ALD Ta films are amorphous or composed of nano-grains. The typical resistivity of ALD Ta films was 150-180 μΩ cm, which corresponds to that of β-Ta phase, at a wide range of growth parameters. The conformality of the film is 100 % up to an aspect ratio of 15:1 and 40 % for aspect ratio of 40:1. The thickness per cycle, corresponding to the growth rate, was measured by Rutherford back scattering as a function of various key growth parameters, including TaCl5 and H exposure time and growth temperature. The maximum thickness per cycle values were below 0.1 ML, probably due to the steric hindrance for TaCl5 adsorption. Bilayer structures consisting of Cu films deposited by sputtering and ALD Ta films with various thicknesses were prepared and the diffusion barrier properties of ALD Ta films were investigated by various analysis techniques consisting of X-ray diffraction, elastic light scattering, and resistance analysis. The results were compared with Ta thin films deposited by sputtering with comparable thicknesses. Also, the growth of TaN films by PE-ALD using consecutive exposures of atomic H and activated N2 is presented.

scholarly journals Improvement of thermal stability of Ta-N film in Cu metallization by a Zr-Si interlayer

2021 ◽  
Vol 271 ◽  
pp. 04015
Author(s):  
Yannan Zhai ◽  
Zhaoxin Wang ◽  
Hui Zhang ◽  
Ling Gao ◽  
Changhong Ding
Keyword(s):  
Diffusion Barrier ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Pure Nitrogen ◽  
Cu Metallization ◽  
In Situ Deposition ◽  
Barrier Performance ◽  
Barrier Breakdown ◽  
20 Nm ◽  
Substrate Temperatures

Ta-N (10 nm)/Zr (20 nm) film was grown on n-type (100) silicon wafer at various substrate temperatures in a rf magnetron sputtering system, followed by in situ deposition of Cu. The Cu/Ta-N/Zr/Si samples were subjected to thermal annealing up to 800 ℃ under the protection of pure nitrogen gas. In order to investigate the effect of insertion of a thin Zr layer under Ta-N film on Ta-N diffusion barrier performance in Cu metallization, Cu/Ta-N/Zr/Si contact system was characterized by X-ray diffraction (XRD), four-point probe (FPP) measurement, scanning electron microscopy (SEM), and Auger electron spectroscopy (AES) depth profile. The results reveal that the microstructure of Ta-N films deposited on Zr is amorphous at different substrate temperatures. The barrier breakdown temperature of Ta-N/Zr film is about 100°C higher than that of Ta-N. It can effectively prevent the diffusion of Cu after annealed at 800°C. The improvement of diffusion barrier performance may be due to the production of Zr-Si layer with low contact resistivity after annealed at 800°C.

Characterization of Atomic Layer Deposited Ultrathin HfO2 Film as a Diffusion Barrier in Cu Metallization

2007 ◽  
Vol 990 ◽  
Author(s):  
Prodyut Majumder ◽  
Rajesh Katamreddy ◽  
Christos G Takoudis
Keyword(s):  
Diffusion Barrier ◽  
Photoelectron Spectroscopy ◽  
Effective Diffusion ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
Hfo2 Film ◽  
X Ray ◽  
Cu Metallization ◽  
Layer Deposition ◽  
Different Temperatures

ABSTRACTThermally stable, amorphous HfO2 thin films deposited using atomic layer deposition have been studied as a diffusion barrier between Cu and the Si substrate. 4 nm thick as-deposited HfO2 films deposited on Si are characterized with X-ray photoelectron spectroscopy. Cu/HfO2/<Si> samples are annealed at different temperatures, starting from 500 °C, in the presence of N2 atmosphere for 5 min and characterized using sheet resistance, X-ray diffraction and scanning electron microscopy. Ultrathin HfO2 films are found to be effective diffusion barrier between Cu and Si with a high failure temperature of about 750 °C.

Electroless CoMoB Diffusion Barrier Layer for ULSI-Cu Metallization

2016 ◽  
Vol 847 ◽  
pp. 91-96
Author(s):  
Xue Mei Liu ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Yu Ping Li ◽  
Ping Bi ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Electroless Deposition ◽  
Si Substrate ◽  
X Ray ◽  
Force Microscopy ◽  
Cu Metallization ◽  
Atomic Force ◽  
Diffusion Barrier Layer ◽  
Failure Temperature ◽  
Annealing Experiments

CoMoB film was prepared on Si substrate via electroless deposition as the diffusion barrier for ULSI-Cu metallization. Annealing experiments of CoMoB(30nm) film and CoMoB(10nm)/Cu (40nm)/CoMoB(30nm)/SiO2/Si multi-films were carried out in the temperature range from 400◦C to 700◦C. Failure temperature and mechanism of Cu diffusion in CoMoB film were discussed. The composition, sheet resistance and morphology of the film were investigated by X-Ray Diffractometer (XRD), Four Point Probe (FPP) and Atomic Force Microscopy (AFM), respectively. It can be concluded that the failure temperature of CoMoB film is 600◦C. The main reason of failure is that a large number of Cu particles passed through CoMoB grain boundary and reacted with Si substrate to generate Cu4Si with high resistance.

TiB2as a Diffusion Barrier for Cu/ Metallization

1999 ◽  
Vol 563 ◽  
Author(s):  
J. L. Wang ◽  
J. S. Chen
Keyword(s):  
Sheet Resistance ◽  
Diffusion Barrier ◽  
Electrical Characterization ◽  
Sample Surface ◽  
Scanning Electron Micrographs ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cu Metallization ◽  
Glancing Angle ◽  
Scanning Electron

AbstractTiB2, films deposited by co-sputtering from a boron and a TiB, target are evaluated as the diffusion barrier for Cu metallization. Material characteristics of the TiB, films and metallurgical interactions of the Cu/TiB2/<Si> system annealed at 400−700°C for 30 min, in a 80%Ar+20%H2 flow, were investigated by glancing angle X-ray diffraction, Auger electron spectroscopy (AES), and scanning electron microscopy (SEM). Sheet resistance was measured for electrical characterization.The composition and resistivity of the sputtered TiB1 films varied with the bias applied on the substrate. To obtain a low film resistivity, a negative bias of 200V was applied during sputtering. The resulting TiB2 film is nanocrystalline with a resistivity of 300 μΩcm. After copper deposition, the Cu/TiB2/<Si> samples have a constant sheet resistance after annealing up to 600°C for 30min. The overall sheet resistance of the sample increases by five orders of magnitude after annealing at 700°C, and scanning electron micrographs reveal that the sample surface is severely deteriorated after annealing at 700°C.

Characterization of Tib2/TISI2 Bilayer Structure Deposited by Sputtering

1995 ◽  
Vol 402 ◽  
Author(s):  
G. Sade ◽  
J. Pelleg
Keyword(s):  
Diffusion Barrier ◽  
Photoelectron Spectroscopy ◽  
Effective Diffusion ◽  
Barrier Properties ◽  
Titanium Boride ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Structural And Electrical Properties

AbstractBilayer of TiB2/TiSi2 was deposited by magnetron co-sputtering on silicon and alumina substrates, and this structure was investigated for structural and electrical properties. Substrate bias and annealing in vacuum have been applied to vary the film properties. X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM) were used to characterize the structure, and chemical composition was characterized by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). Resistivity was measured by four probe method. Diffusion barrier properties were studied by AES. As deposited films are amorphous with resistivities of about 40 μΩcm. Post deposition annealing in vacuum shows that the amorphous titanium boride film is very stable. Crystallization starts above 1000°C as seen by XRD, and the crystallization temperature depends on the thickness of TiB2. TiSi2 C54 forms in the temperature range 586°C - 922°C, when TiB2 still remains in amorphous form. The TiSi2 sublayer serves as an additional effective diffusion barrier, preventing outdiffusion of boron from TiB2 into the Si substrate.

Fabrication of Ta-Al-N Thin Films and its Cu Diffusion on Barrier Properties

2007 ◽  
Vol 26-28 ◽  
pp. 593-596 ◽  
Author(s):  
You Zhen Li ◽  
Ji Cheng Zhou
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Sheet Resistance ◽  
Diffusion Barrier ◽  
Barrier Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atomic Force ◽  
New Generation ◽  
Si Wafer

Ta-Al-N thin films on Si wafer were prepared by RF reactive magnetron sputtering in a N2/Ar ambient. Then the stacked structures of Cu/Ta-Al-N/Si were prepared and annealed at temperatures varied from 400°C to 900°C for 5 minutes in a N2 ambient tube. Four-point probe (FPP) sheet resistance measurement, Atomic force microscope (AFM), Scanning electron microscope(SEM), Alpha-Step IQ Profilers and X-ray Diffraction(XRD) were used to investigate the composition, morphology and the diffusion barrier properties of the thin films. The results show that with the increasing of Al component, the surface of Ta-Al-N thin-films became finer, the sheet resistance became higher, and after annealing at 800°C/300S FA, Cu diffusion through Ta-Al-N barrier didn’t not occurred. Results show that Ta-Al-N thin-films could act as diffusion barrier for new generation integrated circuits due to its excellent high temperature properties.

The Evaluation of TiTe2 as a Diffusion Barrier in the Formation of Low Thermal Conductivity Nanolaminates with Bi2Te3 and Sb2Te3

2010 ◽  
Vol 74 ◽  
pp. 38-47
Author(s):  
Clay Mortensen ◽  
Paul Zschack ◽  
David C. Johnson
Keyword(s):  
Thermal Conductivity ◽  
Diffusion Barrier ◽  
Self Assembly ◽  
Low Temperatures ◽  
Annealing Temperature ◽  
The Self ◽  
High Angle ◽  
X Ray Diffraction ◽  
Amorphous Precursor ◽  
X Ray

The evolution of designed [(Ti-Te)]x[(Sb-Te)]y, [(Bi-Te)]x[(Sb-Te)]y, [(Ti-Te)]w[(Bi-Te)]x[(Sb-Te)]y and [(Ti-Te)]w[(Bi-Te)]x[(Ti-Te)]y[(Sb-Te)]z precursors were followed as a function of annealing temperature and time using both low and high angle x-ray diffraction techniques to probe the self assembly into nanolaminate materials. The [(Bi-Te)]x[(Sb-Te)]y precursors were found to interdiffuse at low temperatures to form a (BixSb1-x)2Te3 alloy. The [(Ti-Te)]x[(Bi-Te)]y and [(Ti-Te)]x[(Sb-Te)]y precursors formed ordered nanolaminates [{(TiTe2)}1.35]x[Bi2Te3]y and [{(TiTe2)}1.35]x[Sb2Te3]y respectively. The [(Ti-Te)]w[(Bi-Te)]x[(Sb-Te)]x precursors formed [{(TiTe2)}1.35]w[(Bi0.5Sb0.5)2Te3]2x nanolaminates on annealing, as the bismuth and antimony layers interdiffused. Over the range of TiTe2 thicknesses used in [(Ti-Te)]w[(Bi-Te)]x[(Ti-Te)]y[(Sb-Te)]z precursors, Bi and Sb were found to interdiffuse through the 2-4 nm thick Ti-Te layers, resulting in the formation of (BixSb1-x)2Te3 alloy layers as part of the final nanolaminated products. When the Bi-Te and Sb-Te thicknesses were equal in the amorphous precursors, symmetric [{(TiTe2)}1.35]m[(Bi0.5Sb0.5)2Te3]n nanolamiantes were formed. When the thicknesses of Bi-Te and Sb-Te layers were not equal in the amorphous precursor, asymmetric [(TiTe2)1.35]m[(BixSb1-x)2Te3]n[(TiTe2)1.35]m[(BixSb1-x)2Te3]p nanolaminates were formed. These results imply that to form (A)w(B)x(C)y nanolaminates using designed layered precursors all three components must be immiscible. To form (A)x(B)y(A)x(C)z nanolaminates, the components must be immiscible or the precursor to the A component and the A component itself must be an effective interdiffusion barrier preventing B and C from mixing.

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