Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy

Applied Physics Letters ◽

10.1063/1.1540239 ◽

2003 ◽

Vol 82 (4) ◽

pp. 633-635 ◽

Author(s):

M. Marso ◽

M. Wolter ◽

P. Javorka ◽

P. Kordoš ◽

H. Lüth

Keyword(s):

Electron Mobility ◽

Deep Level Transient Spectroscopy ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Transient Spectroscopy

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Characterization of deep levels in high electron mobility transistor by conductance deep level transient spectroscopy

Materials Science and Engineering C ◽

10.1016/j.msec.2007.10.068 ◽

2008 ◽

Vol 28 (5-6) ◽

pp. 787-790 ◽

Author(s):

M. Gassoumi ◽

J.M. Bluet ◽

G. Guillot ◽

C. Gaquière ◽

H. Maaref

Keyword(s):

Electron Mobility ◽

Deep Level Transient Spectroscopy ◽

High Electron Mobility Transistor ◽

Deep Levels ◽

High Electron ◽

High Electron Mobility ◽

Transient Spectroscopy

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Analysis of Deep Levels in AlGaN/GaN High Electron Mobility Transistor on Si Substrate Using Capacitance Deep Level Transient Spectroscopy

Advanced Science Engineering and Medicine ◽

10.1166/asem.2013.1396 ◽

2013 ◽

Vol 5 (10) ◽

pp. 1035-1038

Author(s):

M. Charfeddine ◽

M. A. Zaidi ◽

H. Maaref

Keyword(s):

Electron Mobility ◽

Deep Level Transient Spectroscopy ◽

High Electron Mobility Transistor ◽

Deep Levels ◽

High Electron ◽

Si Substrate ◽

High Electron Mobility ◽

Transient Spectroscopy

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Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors

Journal of Applied Physics ◽

10.1063/1.3702458 ◽

2012 ◽

Vol 111 (7) ◽

pp. 073713 ◽

Author(s):

Salah Saadaoui ◽

Mohamed Mongi Ben Salem ◽

Malek Gassoumi ◽

Hassen Maaref ◽

Christophe Gaquière

Keyword(s):

Electron Mobility ◽

Deep Level Transient Spectroscopy ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Transient Spectroscopy

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A deep‐level transient spectroscopy study of high electron mobility transistors subjected to lifetime stress tests

Journal of Applied Physics ◽

10.1063/1.343667 ◽

1989 ◽

Vol 66 (11) ◽

pp. 5613-5617 ◽

Author(s):

R. Magno ◽

R. Shelby ◽

W. T. Anderson

Keyword(s):

Electron Mobility ◽

Deep Level Transient Spectroscopy ◽

High Electron Mobility Transistors ◽

High Electron ◽

Spectroscopy Study ◽

Stress Tests ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Transient Spectroscopy

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Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

Applied Physics Letters ◽

10.1063/1.4813862 ◽

2013 ◽

Vol 103 (3) ◽

pp. 033509 ◽

Author(s):

A. Sasikumar ◽

A. R. Arehart ◽

S. Martin-Horcajo ◽

M. F. Romero ◽

Y. Pei ◽

...

Keyword(s):

Electron Mobility ◽

Deep Level Transient Spectroscopy ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Transient Spectroscopy

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Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

Applied Physics Letters ◽

10.1063/1.3326079 ◽

2010 ◽

Vol 96 (7) ◽

pp. 072107 ◽

Author(s):

W. Chikhaoui ◽

J.-M. Bluet ◽

M.-A. Poisson ◽

N. Sarazin ◽

C. Dua ◽

...

Keyword(s):

Electron Mobility ◽

Deep Level Transient Spectroscopy ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage ◽

Spectroscopy Analysis ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Transient Spectroscopy

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Deep level transient spectroscopy of n-AlGaAs/GaAs high electron mobility transistors

Electronics Letters ◽

10.1049/el:19900108 ◽

1990 ◽

Vol 26 (3) ◽

pp. 159 ◽

Author(s):

J. Goostray ◽

H. Thomas ◽

D.V. Morgan ◽

E. Kohn ◽

A. Christou ◽

...

Keyword(s):

Electron Mobility ◽

Deep Level Transient Spectroscopy ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Transient Spectroscopy

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Capacitance and drain current deep level transient spectroscopy measurements on molecular beam epitaxy grown GaAs/ln0·25Ga0·75As/Al0·3Ga0·7As high electron mobility transistors

Materials Science and Technology ◽

10.1179/mst.1995.11.10.1079 ◽

1995 ◽

Vol 11 (10) ◽

pp. 1079-1082 ◽

Author(s):

Y. Haddab ◽

M. A. Py ◽

J.-M. Bonard ◽

H.-J. Bühlmann ◽

M. lIegems

Keyword(s):

Molecular Beam Epitaxy ◽

Deep Level Transient Spectroscopy ◽

Molecular Beam ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Transient Spectroscopy

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Fermi level pinning, capacitance hysteresis, tunnel effect, and deep level in AlGaN/GaN high-electron-mobility transistor

Superlattices and Microstructures ◽

10.1016/j.spmi.2021.106959 ◽

2021 ◽

pp. 106959

Author(s):

Salah Saadaoui ◽

Olfa Fathallah ◽

Hassen Maaref

Keyword(s):

Fermi Level ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Tunnel Effect ◽

High Electron ◽

High Electron Mobility ◽

Fermi Level Pinning

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Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep Level Transient Spectroscopy

physica status solidi (a) ◽

10.1002/pssa.202100227 ◽

2021 ◽

Author(s):

Po-Chun (Brent) Hsu ◽

Eddy Simoen ◽

Hu Liang ◽

Brice De Jaeger ◽

Benoit Bakeroot ◽

...

Keyword(s):

Deep Level Transient Spectroscopy ◽

Low Frequency ◽

High Electron Mobility Transistors ◽

Frequency Noise ◽

Defect Characterization ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Transient Spectroscopy

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