Fermi level pinning, capacitance hysteresis, tunnel effect, and deep level in AlGaN/GaN high-electron-mobility transistor

2021 ◽  
pp. 106959
Author(s):  
Salah Saadaoui ◽  
Olfa Fathallah ◽  
Hassen Maaref
Keyword(s):  
Fermi Level ◽  
Electron Mobility ◽  
Deep Level ◽  
High Electron Mobility Transistor ◽  
Tunnel Effect ◽  
High Electron ◽  
High Electron Mobility ◽  
Fermi Level Pinning

Analysis of charge density and Fermi level of AlInSb/InSb single-gate high electron mobility transistor

2015 ◽  
Vol 36 (6) ◽  
pp. 064003 ◽  
Author(s):  
S. Theodore Chandra ◽  
N. B. Balamurugan ◽  
M. Bhuvaneswari ◽  
N. Anbuselvan ◽  
N. Mohankumar
Keyword(s):  
Fermi Level ◽  
Charge Density ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode
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