AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation
2019 ◽
pp. 391-402
◽
2020 ◽
Vol 67
(5)
◽
pp. 1939-1945
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2013 ◽
Vol 52
(8S)
◽
pp. 08JN08
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2019 ◽
Vol 58
(SC)
◽
pp. SCCD21
◽