Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method
2013 ◽
Vol 102
(10)
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pp. 103504
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X. Sun
◽
O. I. Saadat
◽
K. S. Chang-Liao
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T. Palacios
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S. Cui
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...
2003 ◽
Vol 82
(15)
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pp. 2530-2532
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R. Mehandru
◽
B. Luo
◽
J. Kim
◽
F. Ren
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B. P. Gila
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...
2018 ◽
Vol 124
(16)
◽
pp. 165704
◽
Jaya Jha
◽
Bhanu B. Upadhyay
◽
Kuldeep Takhar
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Navneet Bhardwaj
◽
Swaroop Ganguly
◽
...
D. K. Panda
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G. Amarnath
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T. R. Lenka
Yu-Shyan Lin
◽
Chi-Che Lu
2020 ◽
Vol 67
(5)
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pp. 1939-1945
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Ching-Ting Lee
◽
Jia-Chen Guo
2013 ◽
Vol 52
(8S)
◽
pp. 08JN08
◽
Milan Ťapajna
◽
Ján Kuzmík
2019 ◽
Vol 58
(SC)
◽
pp. SCCD21
◽
Dagmar Gregušová
◽
Lajos Tóth
◽
Ondrej Pohorelec
◽
Stanislav Hasenöhrl
◽
Štefan Haščík
◽
...
2018 ◽
Vol 8
(4)
◽
pp. 045014
◽
Ching-Ting Lee
◽
Chun-Chi Wang
Li-Hsien Huang
◽
Chien-liang Lu
◽
Ching-Ting Lee