Structural and optical properties of near-surface GaInNAs/GaAs quantum wells at emission wavelength of 1.3 μm

2003 ◽  
Vol 82 (15) ◽  
pp. 2428-2430 ◽  
Author(s):  
H. F. Liu ◽  
C. S. Peng ◽  
E.-M. Pavelescu ◽  
S. Karirinne ◽  
T. Jouhti ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Emission Wavelength ◽  
Structural And Optical Properties ◽  
Near Surface

Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells

2004 ◽  
Vol 268 (3-4) ◽  
pp. 336-341 ◽  
Author(s):  
D.S Jiang ◽  
L.F Bian ◽  
X.G Liang ◽  
K Chang ◽  
B.Q Sun ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Structural And Optical Properties

Structural and optical properties of Si/SiO2 multi-quantum wells

2007 ◽  
Vol 38 (1-2) ◽  
pp. 152-155 ◽  
Author(s):  
T. Mchedlidze ◽  
T. Arguirov ◽  
M. Kittler ◽  
R. Roelver ◽  
B. Berghoff ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Structural And Optical Properties

Structural and optical properties of InGaN/GaN multiple quantum wells: The effect of the number of InGaN/GaN pairs

2000 ◽  
Vol 221 (1-4) ◽  
pp. 368-372 ◽  
Author(s):  
Dong-Joon Kim ◽  
Yong-Tae Moon ◽  
Keun-Man Song ◽  
Chel-Jong Choi ◽  
Young-Woo Ok ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Structural And Optical Properties

scholarly journals Comparison Study of Structural and Optical Properties of InxGa1−xN/GaN Quantum Wells with Different In Compositions

2000 ◽  
Vol 5 (S1) ◽  
pp. 977-983
Author(s):  
Yong-Hwan Kwon ◽  
G. H. Gainer ◽  
S. Bidnyk ◽  
Y. H. Cho ◽  
J. J. Song ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Recombination Rates ◽  
Satellite Peak ◽  
Interface Quality

The effect of In on the structural and optical properties of InxGa1−xN/GaN multiple quantum wells (MQWs) was investigated. These were five-period MQWs grown on sapphire by metalorganic chemical vapor deposition. Increasing the In composition caused broadening of the high-resolution x-ray diffraction superlattice satellite peak and the photoluminescence-excitation bandedge. This indicates that the higher In content degrades the interface quality because of nonuniform In incorporation into the GaN layer. However, the samples with higher In compositions have lower room temperature (RT) stimulated (SE) threshold densities and lower nonradiative recombination rates. The lower RT SE threshold densities of the higher In samples show that the suppression of nonradiative recombination by In overcomes the drawback of greater interface imperfection.

Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxy

1990 ◽  
Vol 41 (18) ◽  
pp. 12599-12606 ◽  
Author(s):  
O. Brandt ◽  
L. Tapfer ◽  
R. Cingolani ◽  
K. Ploog ◽  
M. Hohenstein ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Structural And Optical Properties
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