AFM, HR-XRD AND PL CHARACTERIZATION OF STACKED STRUCTURES In0.5Ga0.5As/GaAs QUANTUM DOTS

In0.5Ga0.5As quantum dots (QDs) stacked structure were studied using atomic force microscopy (AFM), high-resolution X-ray diffraction (HR-XRD) and photoluminescence (PL) characterization. Evolution in the dots size and dots density in the stacked structures is strongly influenced by the dot formation in the under-layer and the structure of the spacer layers. AFM results revealed that the dots formation on the top can be changed by increasing the number of stacked QDs. However, the dots formation is not vertically aligned since HR-XRD measurement gave different satellite peak on n-stacked QD structures. Room-temperature PL measurements show variation in the PL spectra, where blue-shifted PL peak positions are observed when the number of stack is increased. Variation in the HR-XRD and PL measurement is also attributed to the size, composition and density of the dots in the stacked structures.

Detection of Free Radicals in Electron Beam-Irradiated Mucuna pruriens (L. DC.) Seeds by Electron Spin Resonance

Electron spin resonance (ESR) spectroscopy was employed to detect free radicals in raw Mucuna pruriens (velvet bean) seeds after electron beam irradiation (Microtron source: 0, 2.5, 5, 7.5, 10, 15 and 30 kGy) and conventional processing (roasting, powdering and cooking). The ESR signal of irradiated seeds (g=2.0055±0.0001) was more prominent in the seed coat than cotyledon. Seed coat of irradiated samples showed dose-dependent linear increase of this signal (g = 2.0055) accompanied by a weak triplet (satellite peak; aH = 3 mT) produced exclusively by radiolysis and could be used as an indication of successful irradiation. Irradiated cotyledon portion devoid of satellite peak (triplet) showed a linear increase in signal intensity up to 10 kGy with a sharp decline at higher doses (15 and 30kGy). Stability of radiation-induced ESR signals after 6 months of storage (25 ± 1°C) revealed the presence of a weak triplet with a substantial loss of signal intensity. Thermal effects such as roasting and powdering of seeds increased the signal intensity (g = 2.0055) similar to or in greater proportion than irradiation. Phenolics in seeds, which contribute significantly to detect free radicals in vegetative parts of a plant showed a waning trend in seed coat, while it was vice versa in cotyledon. Textural studies revealed significant loss in firmness after irradiation (p<0.05), which might favour in minimising the cooking time. Results of the present study might help to divulge the beneficial effects of application of electron beam irradiation technology as a better alternative to fumigants in seed preservation for safety and quarantine purposes.

Monoenergetic electron beam generation from a laser-plasma accelerator

We have demonstrated the acceleration of a monoenergetic electron beam by a laser-produced wakefield. Experiments were performed by focusing 2-TW laser pulses of 50 fs on supersonic gas-jet targets. The focused intensity was 5 × 1018 W/cm2 (a0 = 1.5). At an electron density of 1.5 × 1020 cm−3, the clear monoenergetic electron beam from the plasma was obtained at 7 to 15 MeV. The Stokes satellite peak in the forward scattering explained the energy spectra of electrons at various plasma densities well. Although the wakefield propagated 500 microns, which was far beyond the dephasing length, monoenergetic electron beams were obtained.

Crystalline and Electrical Properties of AlInN/GaN and AlN/GaN superlattices on GaN Grown by Metalorganic Vapor Phase Epitaxy

We have studied the crystalline and electrical properties of AlInN/GaN superlattices (SLs) and strained AlN/GaN SLs on GaN grown by metalorganic vapor phase epitaxy. A (0001) sapphire substrate was used. The SLs were grown using N2 carrier gas. X-ray analysis showed the eighth order satellite peak in AlInN/GaN SLs. Hall measurement showed an electron mobility of 946 cm2/Vs at highest (a sheet carrier density of 2.9x1012 cm-2) for AlInN/GaN 5SLs on GaN at 295K, and showed a value of 11432 cm2/Vs (1.99x1012cm-2) at 170K, and a value of 2610 cm2/Vs (3.38x1012cm-2) at 295K for AlN/GaN 10SLs on GaN.

Statistical Signs of Common Inhibitory Feedback with Delay

Cross-correlation histograms (CCHs) sometimes exhibit an isolated central peak flanked by two troughs. What can cause this pattern? The absence of CCH satellite peak makes an oscillatory common input doubtful. It is here shown using a simple counting model that a common inhibitory feedback with delay can account for this pattern.