Hydrogen configurations, formation energies, and migration barriers in GaN

2003 ◽  
Vol 94 (4) ◽  
pp. 2311-2318 ◽  
Author(s):  
A. F. Wright ◽  
C. H. Seager ◽  
S. M. Myers ◽  
D. D. Koleske ◽  
A. A. Allerman
Author(s):  
Shehab Shousha ◽  
Sarah Khalil ◽  
Mostafa Youssef

This paper studies comprehensively the defect chemistry and cation diffusion in α-Fe2O3. Defect formation energies and migration barriers are calculated using density functional theory with a theoretically calibrated Hubbard U...


2021 ◽  
Author(s):  
Ankit Roy ◽  
Prashant Singh ◽  
Ganesh Balasubramanian ◽  
Duane D. Johnson

2022 ◽  
pp. 117611
Author(s):  
Ankit Roy ◽  
Prashant Singh ◽  
Ganesh Balasubramanian ◽  
Duane D. Johnson

2013 ◽  
Vol 27 (24) ◽  
pp. 1350173 ◽  
Author(s):  
ALI KAZEMPOUR

Applying the screened hybrid functional Heyd–Scuseria–Ernzerhof (HSE) method, we studied the polaronic degree of freedom of different charged oxygen vacancies V o in rutile TiO 2. The HSE method not only corrects the band gap, but also allows for correct polaron localization. Due to the important role of phonon in oxygen vacancy associated levels in the gap, we calculated configuration coordinate (CC) potential energy surfaces for all charged V o 's. Our calculated CC diagrams with effective impression on host states, show significant improvement of electron–lattice interaction compared to semi(local) DFT methods. The obtained values of stokes shifts for sequential transitions of charged vacancies agree well with experimental evidences which confirm Ti 3+ centers are responsible for photoluminescence. In addition, we explored the effect of polaron localization on diffusive mechanism of V o along most open [001] direction. Calculated values of migration barriers for [Formula: see text] are found to be in quantitative agreement with experimental migration energy [E. Iguchi and K. Yajima, J. Phys. Soc. Jpn.32 (1971) 1415] of 2.4 eV. These results highlight the small polaronic behavior of V o 's and is consistent with studies suggest the polaronic hopping model for electron transport of n-type conductivity in reduced TiO 2 [J.-F. Baumard and F. Gervais, Phys. Rev. B15 (1977) 2316–2323].


1998 ◽  
Vol 552 ◽  
Author(s):  
H. Schweiger ◽  
E. Moroni ◽  
W. Wolf ◽  
W. Püischl ◽  
W. Pfeiler ◽  
...  

ABSTRACTProperties of point defects such as antisites and vacancies in Ni3A1 are studied by means of ab initio calculations for supercells. Temperature dependent quantitities such as defect formation energies are derived by means of a grandcanonical ensemble. Stimulated by experiments of residual resistivities suggesting an outstandingly large activation energy of 4.6 eV due to Al vacancies, several models for point like defects are treated in combination with calculated migration barriers for nearest neighbor jumps and also the six-jump model.


2015 ◽  
Vol 29 (11) ◽  
pp. 1550044
Author(s):  
Li An Chen ◽  
En Hai Jiang ◽  
Xing Feng Zhu ◽  
Ling Fu Chen

The diffusion plays an important role in many applications when the impurities are employed to tune the semiconductor's electrical or optical properties, which make it essential to understand theoretically the microscopic mechanisms governing how dopant defects diffuse. Using first-principles calculations, we compare the diffusion behaviors and migration barriers of interstitial Cu , Ag , and Au atoms in II–VI compounds ZnSe . We consider interstitial diffusion mechanisms and calculate the corresponding activation energies. For noble atoms, we find that the interstitial mediated mechanism is the dominant one. We also find that the relative size of dopant atoms and constituent atoms of II–VI compounds is an important factor affecting the diffusion behaviors. The coupling in ZnSe between Cu d levels and unoccupied host s levels is not as strong as that in CdTe .


1997 ◽  
Vol 469 ◽  
Author(s):  
J. F. Justo ◽  
V. V. Bulatov ◽  
S. Yip

ABSTRACTWe study the leading mechanisms of kink mobility of 30° and 90°-partial dislocations in the glide set {111} of silicon. The calculations are performed using a new empirical potential for Si, which has been shown to give an accurate description of core properties of partial dislocations [1], to study mechanisms of kink formation and migration. In the case of 30°-partial dislocation, two kinds of kinks are identified, left and right, which have different structures, formation energies, and mobilities.


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