Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy
2003 ◽
Vol 83
(4)
◽
pp. 689-691
◽
Premila Mohan
◽
Fumito Nakajima
◽
Masashi Akabori
◽
Junichi Motohisa
◽
Takashi Fukui
Premila Mohan
◽
Junichi Motohisa
◽
Takashi Fukui
2020 ◽
Vol 709
◽
pp. 138125
Pattana Suwanyangyaun
◽
Sakuntam Sanorpim
◽
Kentaro Onabe
T. Tsuchiya
◽
J. Shimizu
◽
M. Shirai
◽
M. Aoki
2005 ◽
Vol 87
(3)
◽
pp. 033501
◽
Yoshihito Miyoshi
◽
Fumito Nakajima
◽
Junichi Motohisa
◽
Takashi Fukui
2000 ◽
Vol 25
(5)
◽
pp. 300-302
◽
Hyun-Soo Kim
◽
Dae Kon Oh
◽
Moon-Ho Park
◽
Nam Hwang
◽
In-Hoon Choi
2013 ◽
Vol 6
(2)
◽
pp. 025502
◽
Yoshinori Kohashi
◽
Shinya Sakita
◽
Shinjiroh Hara
◽
Junichi Motohisa
2002 ◽
Vol 190
(1-4)
◽
pp. 184-190
◽
J. Motohisa
◽
F. Nakajima
◽
T. Fukui
2013 ◽
Vol 6
(10)
◽
pp. 105501
◽
Tetsuya Akasaka
◽
Yasuyuki Kobayashi
◽
Makoto Kasu
◽
Hideki Yamamoto
2008 ◽
Vol 310
(7-9)
◽
pp. 2359-2364
◽
Takuya Sato
◽
Junichi Motohisa
◽
Jinichiro Noborisaka
◽
Shinjiro Hara
◽
Takashi Fukui
Y. Miyoshi
◽
F. Nakajima
◽
J. Motohisa
◽
T. Fukui