A 1 bit binary-decision-diagram adder circuit using single-electron transistors made by selective-area metalorganic vapor-phase epitaxy

Applied Physics Letters ◽

10.1063/1.1992665 ◽

2005 ◽

Vol 87 (3) ◽

pp. 033501 ◽

Author(s):

Yoshihito Miyoshi ◽

Fumito Nakajima ◽

Junichi Motohisa ◽

Takashi Fukui

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Binary Decision Diagram ◽

Single Electron ◽

Single Electron Transistors ◽

Binary Decision ◽

Selective Area ◽

Electron Transistors

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1-bit BDD full adder circuit using single electron transistors by selective area metalorganic vapor phase epitaxy

10.7567/ssdm.2003.e-5-4 ◽

2003 ◽

Author(s):

Y. Miyoshi ◽

F. Nakajima ◽

J. Motohisa ◽

T. Fukui

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Single Electron ◽

Single Electron Transistors ◽

Selective Area ◽

Electron Transistors

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GaAs Single Electron Transistors Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy and Their Application to Single Electron Logic Circuits

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.415 ◽

1999 ◽

Vol 38 (Part 1, No. 1B) ◽

pp. 415-417 ◽

Author(s):

Fumito Nakajima ◽

Kazuhide Kumakura ◽

Junichi Motohisa ◽

Takasi Fukui

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Logic Circuits ◽

Vapor Phase Epitaxy ◽

Single Electron ◽

Single Electron Transistors ◽

Selective Area ◽

Electron Transistors

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GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices

Journal of Applied Physics ◽

10.1063/1.1389482 ◽

2001 ◽

Vol 90 (5) ◽

pp. 2606-2611 ◽

Author(s):

Fumito Nakajima ◽

Yuu Ogasawara ◽

Junichi Motohisa ◽

Takashi Fukui

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Single Electron ◽

Selective Area ◽

Single Electron Devices ◽

Electron Devices ◽

Coupled Structures

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Two-way switch for binary decision diagram logic using silicon single-electron transistors

Microelectronic Engineering ◽

10.1016/s0167-9317(04)00208-4 ◽

2004 ◽

Vol 73-74 ◽

pp. 712-718 ◽

Author(s):

J HE

Keyword(s):

Binary Decision Diagram ◽

Single Electron ◽

Single Electron Transistors ◽

Binary Decision ◽

Diagram Logic ◽

Electron Transistors

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Selective-area growth and characterization of cubic GaN grown by metalorganic vapor phase epitaxy

Thin Solid Films ◽

10.1016/j.tsf.2020.138125 ◽

2020 ◽

Vol 709 ◽

pp. 138125

Author(s):

Pattana Suwanyangyaun ◽

Sakuntam Sanorpim ◽

Kentaro Onabe

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Selective Area ◽

Area Growth ◽

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InGaAlAs selective-area growth on an InP substrate by metalorganic vapor phase epitaxy

International Conference onIndium Phosphide and Related Materials, 2003. ◽

10.1109/iciprm.2003.1205438 ◽

2003 ◽

Author(s):

T. Tsuchiya ◽

J. Shimizu ◽

M. Shirai ◽

M. Aoki

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Selective Area ◽

Inp Substrate ◽

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1.55 ?m spot-size converter integrated-laser diode fabricated by selective-area metalorganic vapor-phase epitaxy

Microwave and Optical Technology Letters ◽

10.1002/(sici)1098-2760(20000605)25:5<300::aid-mop4>3.0.co;2-s ◽

2000 ◽

Vol 25 (5) ◽

pp. 300-302 ◽

Author(s):

Hyun-Soo Kim ◽

Dae Kon Oh ◽

Moon-Ho Park ◽

Nam Hwang ◽

In-Hoon Choi

Keyword(s):

Laser Diode ◽

Vapor Phase ◽

Spot Size ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

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Pitch-Independent Realization of 30-nm-Diameter InGaAs Nanowire Arrays by Two-Step Growth Method in Selective-Area Metalorganic Vapor-Phase Epitaxy

Applied Physics Express ◽

10.7567/apex.6.025502 ◽

2013 ◽

Vol 6 (2) ◽

pp. 025502 ◽

Author(s):

Yoshinori Kohashi ◽

Shinya Sakita ◽

Shinjiroh Hara ◽

Junichi Motohisa

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Nanowire Arrays ◽

Independent Realization ◽

Selective Area ◽

Growth Method ◽

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Formation of nanoscale heterointerfaces by selective area metalorganic vapor-phase epitaxy and their applications

Applied Surface Science ◽

10.1016/s0169-4332(01)00888-1 ◽

2002 ◽

Vol 190 (1-4) ◽

pp. 184-190 ◽

Author(s):

J. Motohisa ◽

F. Nakajima ◽

T. Fukui

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

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Carrier Gas Dependent Evaporation Energy of GaN Estimated from Spiral Growth Rates in Selective-Area Metalorganic Vapor Phase Epitaxy

Applied Physics Express ◽

10.7567/apex.6.105501 ◽

2013 ◽

Vol 6 (10) ◽

pp. 105501 ◽

Author(s):

Tetsuya Akasaka ◽

Yasuyuki Kobayashi ◽

Makoto Kasu ◽

Hideki Yamamoto

Keyword(s):

Vapor Phase ◽

Growth Rates ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Spiral Growth ◽

Carrier Gas ◽

Selective Area ◽

Evaporation Energy

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