Pitch-Independent Realization of 30-nm-Diameter InGaAs Nanowire Arrays by Two-Step Growth Method in Selective-Area Metalorganic Vapor-Phase Epitaxy

2013 ◽  
Vol 6 (2) ◽  
pp. 025502 ◽  
Author(s):  
Yoshinori Kohashi ◽  
Shinya Sakita ◽  
Shinjiroh Hara ◽  
Junichi Motohisa
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Independent Realization ◽  
Selective Area ◽  
Growth Method ◽  
Step Growth

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

2021 ◽  
Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Growth of InGaAs nanowires by selective-area metalorganic vapor phase epitaxy

2008 ◽  
Vol 310 (7-9) ◽  
pp. 2359-2364 ◽  
Author(s):  
Takuya Sato ◽  
Junichi Motohisa ◽  
Jinichiro Noborisaka ◽  
Shinjiro Hara ◽  
Takashi Fukui
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Selective Area

scholarly journals Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy

2003 ◽  
Vol 83 (4) ◽  
pp. 689-691 ◽  
Author(s):  
Premila Mohan ◽  
Fumito Nakajima ◽  
Masashi Akabori ◽  
Junichi Motohisa ◽  
Takashi Fukui
Keyword(s):  
Vapor Phase ◽  
Lattice Structure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Kagome Lattice ◽  
Kagomé Lattice ◽  
Selective Area
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