Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

Applied Physics Letters ◽

10.1063/1.1604472 ◽

2003 ◽

Vol 83 (8) ◽

pp. 1650-1652 ◽

Author(s):

J. A. Mittereder ◽

S. C. Binari ◽

P. B. Klein ◽

J. A. Roussos ◽

D. S. Katzer ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Bias Stress ◽

Electron Mobility Transistors ◽

Current Collapse

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Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.061001 ◽

2011 ◽

Vol 50 (6) ◽

pp. 061001 ◽

Author(s):

Masafumi Tajima ◽

Tamotsu Hashizume

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Bias Stress ◽

Electron Mobility Transistors ◽

Current Collapse

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Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics

Microelectronics Reliability ◽

10.1016/j.microrel.2013.07.115 ◽

2013 ◽

Vol 53 (9-11) ◽

pp. 1456-1460 ◽

Author(s):

I. Rossetto ◽

M. Meneghini ◽

G. Meneghesso ◽

E. Zanoni

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

Reverse Bias ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Bias Stress ◽

Electron Mobility Transistors ◽

Current Collapse

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Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.061001 ◽

2011 ◽

Vol 50 (6R) ◽

pp. 061001 ◽

Author(s):

Masafumi Tajima ◽

Tamotsu Hashizume

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Bias Stress ◽

Electron Mobility Transistors ◽

Current Collapse

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Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation

Solid-State Electronics ◽

10.1016/j.sse.2013.09.001 ◽

2013 ◽

Vol 89 ◽

pp. 207-211 ◽

Author(s):

A. Alexewicz ◽

M. Alomari ◽

D. Maier ◽

H. Behmenburg ◽

C. Giesen ◽

...

Keyword(s):

Surface Treatment ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Thermally Stable ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.1953873 ◽

2005 ◽

Vol 86 (25) ◽

pp. 253511 ◽

Author(s):

P. Kordoš ◽

J. Bernát ◽

M. Marso ◽

H. Lüth ◽

F. Rampazzo ◽

...

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Current collapse suppression by SiO2 passivation in p-GaN/AlGaN/GaN enhancement-mode high electron mobility transistors

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) ◽

10.1109/iciprm.2016.7528613 ◽

2016 ◽

Author(s):

Shin-Yi Ho ◽

Chih-Hao Wang ◽

JianJang Huang

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors ◽

Current Collapse

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Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors

Solid-State Electronics ◽

10.1016/j.sse.2010.05.002 ◽

2010 ◽

Vol 54 (11) ◽

pp. 1430-1433 ◽

Author(s):

S. Arulkumaran ◽

G.I. Ng ◽

C.H. Lee ◽

Z.H. Liu ◽

K. Radhakrishnan ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Rf Plasma ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress

Applied Physics Letters ◽

10.1063/1.4900750 ◽

2014 ◽

Vol 105 (17) ◽

pp. 173507 ◽

Author(s):

Wei-Wei Chen ◽

Xiao-Hua Ma ◽

Bin Hou ◽

Jie-Jie Zhu ◽

Yong-He Chen ◽

...

Keyword(s):

Electron Mobility ◽

Reverse Bias ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Bias Stress ◽

Electron Mobility Transistors ◽

Degradation Modes

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Improvement of Current Collapse in Deeply Recessed Gate AlGaN/GaN High Electron Mobility Transistors without Field Modulating Structure

10.7567/ssdm.2011.a-1-4 ◽

2011 ◽

Author(s):

A. Imai ◽

K. Yamanaka ◽

Y. Suzuki ◽

T. Nanjo ◽

M. Suita ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse ◽

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Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors

Electronics Letters ◽

10.1049/el:20010434 ◽

2001 ◽

Vol 37 (10) ◽

pp. 661 ◽

Author(s):

P.B. Klein ◽

S.C. Binari ◽

K. Ikossi-Anastasiou ◽

A.E. Wickenden ◽

D.D. Koleske ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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