Trapping of negative and positive charges in Ge+ ion implanted silicon dioxide layers subjected to high-field electron injection

2003 ◽  
Vol 94 (7) ◽  
pp. 4440-4448 ◽  
Author(s):  
A. N. Nazarov ◽  
T. Gebel ◽  
L. Rebohle ◽  
W. Skorupa ◽  
I. N. Osiyuk ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
High Field ◽  
Electron Injection ◽  
Field Electron ◽  
Ion Implanted

Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection

2002 ◽  
Vol 42 (9-11) ◽  
pp. 1461-1464 ◽  
Author(s):  
A.N. Nazarov ◽  
I.N. Osiyuk ◽  
V.S. Lysenko ◽  
T. Gebel ◽  
L. Rebohle ◽  
...  
Keyword(s):  
High Field ◽  
Charge Trapping ◽  
Electron Injection ◽  
Field Electron ◽  
Ion Implanted

Influence of high-field electron injection regimes on modification of dielectric films of MOS devices

2010 ◽  
Vol 1 (2) ◽  
pp. 105-109
Author(s):  
V. V. Andreev ◽  
G. G. Bondarenko ◽  
A. A. Stolyarov ◽  
D. S. Vasyutin ◽  
A. M. Mikhal’kov
Keyword(s):  
High Field ◽  
Electron Injection ◽  
Dielectric Films ◽  
Mos Devices ◽  
Field Electron

scholarly journals Modification of MOS Devices by High-Field Electron Injection and Arc Plasma Jet Treatment

2015 ◽  
Vol 128 (5) ◽  
pp. 887-890 ◽  
Author(s):  
V.V. Andreev ◽  
G.G. Bondarenko ◽  
V.M. Maslovsky ◽  
A.A. Stolyarov
Keyword(s):  
High Field ◽  
Plasma Jet ◽  
Electron Injection ◽  
Arc Plasma ◽  
Mos Devices ◽  
Field Electron

Generation of Hole Traps in Silicon Dioxide Under Fowler-Nordheim Stress

1996 ◽  
Vol 428 ◽  
Author(s):  
T. Brożek ◽  
Y. D. Chan ◽  
C. R. Viswanathan
Keyword(s):  
Silicon Dioxide ◽  
High Field ◽  
Silicon Oxide ◽  
Electron Injection ◽  
Oxide Semiconductor ◽  
Hole Injection ◽  
Oxide Interface ◽  
Report Generation ◽  
Oxide Layers ◽  
Hole Trapping

AbstractHigh field electron injection in silicon oxide layers in metal-oxide-semiconductor system is widely known to degrade thin silicon oxide layers and the silicon-oxide interface, eventually leading to catastrophic oxide breakdown. In this work we report generation of hole traps under high-field stressing of thermal silicon dioxide layers on silicon. Excess hole trapping on newly generated hole traps is observed by substrate hot-hole injection in 9 nm oxide PMOS transistors after high-field Fowler-Nordheim stress followed by standard post-metallization annealing in nitrogen. The concentration of generated traps is stress-polarity dependent and increases with electron fluence during degrading stress. Relaxation behavior under switching oxide fields indicates that the nature of hole trapping sites is different from anomalous positive charge centers. A correlation of density of generated hole traps with the amount of generated electron traps shows that both types of traps are effectively generated in the oxide layer under Fowler-Nordheim tunneling electron injection.

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