Mechanisms of positive charge generation in buried oxide of UNIBOND and separation by implanted oxygen silicon-on-insulator structures during high-field electron injection

2003 ◽  
Vol 94 (3) ◽  
pp. 1823-1832 ◽  
Author(s):  
A. N. Nazarov ◽  
V. I. Kilchytska ◽  
Y. Houk ◽  
D. Ballutaud
Keyword(s):  
High Field ◽  
Positive Charge ◽  
Electron Injection ◽  
Silicon On Insulator ◽  
Charge Generation ◽  
Buried Oxide ◽  
Field Electron

Influence of high-field electron injection regimes on modification of dielectric films of MOS devices

2010 ◽  
Vol 1 (2) ◽  
pp. 105-109
Author(s):  
V. V. Andreev ◽  
G. G. Bondarenko ◽  
A. A. Stolyarov ◽  
D. S. Vasyutin ◽  
A. M. Mikhal’kov
Keyword(s):  
High Field ◽  
Electron Injection ◽  
Dielectric Films ◽  
Mos Devices ◽  
Field Electron

scholarly journals Modification of MOS Devices by High-Field Electron Injection and Arc Plasma Jet Treatment

2015 ◽  
Vol 128 (5) ◽  
pp. 887-890 ◽  
Author(s):  
V.V. Andreev ◽  
G.G. Bondarenko ◽  
V.M. Maslovsky ◽  
A.A. Stolyarov
Keyword(s):  
High Field ◽  
Plasma Jet ◽  
Electron Injection ◽  
Arc Plasma ◽  
Mos Devices ◽  
Field Electron

Trapping of negative and positive charges in Ge+ ion implanted silicon dioxide layers subjected to high-field electron injection

2003 ◽  
Vol 94 (7) ◽  
pp. 4440-4448 ◽  
Author(s):  
A. N. Nazarov ◽  
T. Gebel ◽  
L. Rebohle ◽  
W. Skorupa ◽  
I. N. Osiyuk ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
High Field ◽  
Electron Injection ◽  
Field Electron ◽  
Ion Implanted

scholarly journals Прогнозирование величины захваченного заряда в захороненном оксиде кремния структур кремний-на-изоляторе с применением эффекта Пула-Френкеля

2020 ◽  
Vol 54 (5) ◽  
pp. 441
Author(s):  
А.А. Ширяев ◽  
В.М. Воротынцев ◽  
Е.Л. Шоболов
Keyword(s):  
Silicon Oxide ◽  
Positive Charge ◽  
Silicon On Insulator ◽  
Buried Oxide ◽  
Frenkel Effect ◽  
Current Voltage ◽  
Different Temperatures ◽  
Current Voltage Characteristics ◽  
Current Value ◽  
Dose Radiation

The opportunity to predict trapped charge value in buried silicon oxide of silicon-on-insulator structures using Poole−Frenkel effect was investigated. Using measuring and modeling of current–voltage characteristics of buried silicon oxide at different temperatures conditions for Poole−Frenkel effect in this layer were determined. Processes taking place in buried oxide during measurement of current–voltage characteristics and annealing were considered. Conditions of thermal field treatment of buried oxide for radiation exposure imitation using injection were determined. Dependence of accumulated positive charge value in buried silicon oxide as a result of injection on Poole−Frenkel current value was estimated. The opportunity to use Poole−Frenkel effect for buried oxide defectiveness evaluation during manufacturing of microcircuits with enhanced dose radiation hardness is shown.

Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection

2002 ◽  
Vol 42 (9-11) ◽  
pp. 1461-1464 ◽  
Author(s):  
A.N. Nazarov ◽  
I.N. Osiyuk ◽  
V.S. Lysenko ◽  
T. Gebel ◽  
L. Rebohle ◽  
...  
Keyword(s):  
High Field ◽  
Charge Trapping ◽  
Electron Injection ◽  
Field Electron ◽  
Ion Implanted
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